Allicdata Part #: | 3EZ6.8D2E3/TR8-ND |
Manufacturer Part#: |
3EZ6.8D2E3/TR8 |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 3W DO204AL |
More Detail: | Zener Diode 6.8V 3W ±2% Through Hole DO-204AL (DO-... |
DataSheet: | 3EZ6.8D2E3/TR8 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.58510 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±2% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 3EZ6.8 |
Description
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IntroductionThe 3EZ6.8D2E3/TR8 diode is a single Zener diode that has wide application in various industrial fields. They are capable of providing a high current flow with a low forward threshold and maximum reverse breakdown voltage. In addition, they are designed to endure extreme weather conditions and fluctuating voltage currents. This article provides an explanation of the application field and working principle of the 3EZ6.8D2E3/TR8 diode.
Application Field
The 3EZ6.8D2E3/TR8 diode has a wide range of application areas, including automotive, medical, home appliance, computer, telecommunications, information systems, and aerospace fields. The diode has an impressive operating temperature range of -55 to +175 Celsius and can handle considerable variation in temperature with no ill effect. Its low reverse breakdown voltage makes it ideal for use in high-power applications. In addition, it has excellent surge protection capabilities and can be used in test equipment, power feeders, and other industrial equipment.
Working Principle
The 3EZ6.8D2E3/TR8 diode\'s conduction mechanism is based on the Zener effect, a phenomenon that occurs when the reverse breakdown voltage of a semiconductor exceeds its forward voltage. This breakdown can be produced by two different causes—thermal ionization or avalanche ionization. When a large number of electrons accumulate near the junction of the diode, their energy causes a very large concentration of electric charge. This charge, when applied to the junction of the diode, causes a breakdown of the diode. This breakdown can reach up to a maximum of 6.8 volts. When the current is reversed, the electrons disperse and the breakdown voltage is reduced.
Conclusion
The 3EZ6.8D2E3/TR8 is a single Zener diode that has wide application in various industrial fields. Due to its low forward voltage and high reverse breakdown voltage, it is ideal for use in high-power applications. It is designed to handle fluctuating voltage currents and extreme weather conditions, making it extremely versatile. Its conduction mechanism is based on the Zener effect, which occurs when the reverse breakdown voltage of a semiconductor exceeds its forward voltage.
The specific data is subject to PDF, and the above content is for reference
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