3KASMC10AHE3/9AT

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TVS (transient voltage suppressor) diode devices provide high levels of protection against transient overvoltages by clamping action during fault conditions. The 3KASMC10AHE3/9AT is a transient voltage suppressor diode manufactured by ON Semiconductor, designed to protect sensitive electronic devices from electromotive force (EMF) or electrical transients.

Transient voltage suppressor diodes, or TVS diodes, act as suppressors of excessive transient voltage surges. They offer precision protection from voltage transients at any time and in any place. The 3KASMC10AHE3/9AT is designed as protection for high-speed semiconductor circuits in applications such as computers, military systems, and telecommunications. It is ideal for applications typically subjected to large transients or surges such as automotive ignition systems and high-voltage power supplies.

The 3KASMC10AHE3/9AT is a bi-directional device that can be used for both overvoltage protection (OVP) and reverse bias protection (RBP). The diode is operated in the breakdown region of its characteristic. A voltage greater than the breakdown voltage, or “knee voltage”, will cause the diode to break down and become conductive. The resulting surge of current across the device is then used to clamp the voltage to the device’s reverse breakdown voltage. This process helps protect sensitive components from voltage transients.

The 3KASMC10AHE3/9AT has a reverse bias breakdown voltage rating of 8 V and a reverse current rating of 1 mA at 5 V. It also has a surge current handling capability of 18.8 A (8/20 µs). The maximum forward current is 0.67 mA and the capacitance is 1.6 pF at 1 MHz. The diode is made with a silicon die, a lead-frame, a molding compound, and external electrodes. The package is hermetically sealed and has an insulation rating of 10 mouser.

In conclusion, 3KASMC10AHE3/9AT is a diode specifically designed to provide protection from voltage transients in high-speed semiconductor circuit applications. It offers a high level of protection and is capable of handling large surges of current. Its reverse bias breakdown voltage rating of 8 V and reverse current rating of 1 mA at 5 V makes it an ideal choice for applications subjected to high voltage transients.

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