3KASMC12AHE3_B/H Allicdata Electronics
Allicdata Part #:

3KASMC12AHE3_B/H-ND

Manufacturer Part#:

3KASMC12AHE3_B/H

Price: $ 0.51
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 12V 19.9V DO214AB
More Detail: N/A
DataSheet: 3KASMC12AHE3_B/H datasheet3KASMC12AHE3_B/H Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
850 +: $ 0.46504
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Voltage - Clamping (Max) @ Ipp: 19.9V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 151A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are components used in electronic circuits to protect them from electrical damage or destruction caused by electrostatic discharge (ESD), transients, surges, lightning and other similar effects. The 3KASMC12AHE3_B/H is a special type of TVS diode which is suitable for a wide range of applications.

The 3KASMC12AHE3_B/H is a dual bidirectional TVS diode that is designed to protect sensitive electronic systems from ESD strikes, transients and other electrical overstress conditions. It has a maximum peak pulse current of 400A and a maximum standoff voltage of 12V. The diode features a minimum breakdown voltage of 5.2V and a normal reverse leakage current of 2uA.

The 3KASMC12AHE3_B/H can be used in a wide range of applications including motor control systems, motor drives, power supplies, medical equipment, and automotive systems. It is also suitable for use in consumer electronics such as smartphones, laptops, tablets and gaming consoles.

The diode offers strong protection against ESD strikes, transients and other overstress conditions, allowing it to remain in full functional operation during periods of extreme stress. The diode also features a low profile design which allows for minimal device impedance and improved efficiency.

The working principle of the 3KASMC12AHE3_B/H diode is the same as that of other TVS diodes. When an ESD strike or other electrostatic event occurs, the diode’s breakdown voltage is reached, allowing the current to flow through the diode. This in turn causes the device to absorb the excess energy and protect the circuit from being damaged or destroyed.

The 3KASMC12AHE3_B/H TVS diode is an efficient and effective protection solution for a wide range of applications. Its small form-factor and low impedance design make it suitable for use in a variety of settings, while its high level of protection makes it ideal for protecting sensitive electronics.

The specific data is subject to PDF, and the above content is for reference

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