3KASMC12HE3_A/I Allicdata Electronics
Allicdata Part #:

3KASMC12HE3_A/I-ND

Manufacturer Part#:

3KASMC12HE3_A/I

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 12V 22V DO214AB
More Detail: N/A
DataSheet: 3KASMC12HE3_A/I datasheet3KASMC12HE3_A/I Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 136A
Base Part Number: 3KASMC12
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Series: Automotive, AEC-Q101, PAR®
Voltage - Clamping (Max) @ Ipp: 22V
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

TVS (Transient Voltage Suppression) diodes are a type of semiconductor device designed to protect sensitive electronic components from electrical disruptions such as ESD (electrostatic discharge) and electrical transients. The 3KASMC12HE3_A/I is a TVS diode manufactured by ST Microelectronics and is designed specifically for protecting automotive systems from electrical surges.

3KASMC12HE3_A/I Application Field and Working Principle

The 3KASMC12HE3_A/I is designed to provide efficient protection for various automotive systems such as ABS (Anti-lock Braking System), ESP (Electronic Stability Program), and motor control systems. It has a high breakdown voltage of over 95V and a low clamping voltage Vc of 16V. The low Vc allows the diode to protect a broad range of automotive systems against transients and ESD. The 3KASMC12HE3_A/I utilizes a Silicon avalanche diode, which is a diode that is made with a high voltage resistant layer within the diode, allowing it to conduct current when its threshold voltage is exceeded. This threshold voltage is the point at which the diode will become conductive and is known as the breakdown voltage. In the case of the 3KASMC12HE3_A/I, the breakdown voltage is over 95V. When a voltage surge higher than the breakdown voltage is applied to the diode, it becomes conductive and the surge current is redirected through the diode. This surge current is also diverted away from the sensitive electronics components, thus protecting them from the surge. The diode will then quickly return to its non-conductive state once the voltage surge is over and the diode will be ready to protect against the next surge.

Conclusion

The 3KASMC12HE3_A/I is a TVS diode that is specifically designed to provide optimal protection for various automotive systems such as ABS, ESP, and motor control systems. It uses a Silicon avalanche diode, which allows it to quickly conduct current when a voltage surge higher than the breakdown voltage of 93V is applied and redirect the surge current away from sensitive electronic components. Thus, the 3KASMC12HE3_A/I is an ideal choice for automotive application requiring transient voltage protection.

The specific data is subject to PDF, and the above content is for reference

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