3KASMC17AHE3_B/H

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TVS - Diodes, such as 3KASMC17AHE3_B/H, are semiconductor structures that are designed to protect a circuit or system from faults caused by transient over-voltage events. They operate by clamping the voltage to a predefined level, to prevent the voltage from exceeding the maximum level allowed by the component\'s specifications. In other words, the TVS - Diodes allow for a safe and efficient finish protection from overvoltage.

The 3KASMC17AHE3_B/H is designed to protect circuits from over-voltage transients, which occur when voltages of 200V or higher rise too quickly. It has an array of limited reverse current characteristics, and is designed to reduce the maximum stress the reverse current can produce. The device also features an integrated circuit with a reverse current rating of up to 35A, and a stand-off voltage of 4V.

The 3KASMC17AHE3_B/H is designed specifically for applications that are sensitive to high voltages and direct current (DC) transients, as well as electrostatic discharge (ESD). It is often used in devices containing low power signal circuits, such as logic gates, microcontrollers, and memory chips.

The working principle of 3KASMC17AHE3_B/H is as follows. When a high voltage transient event occurs, the device will clamp the voltage across it to a predetermined value. This clamped voltage is then maintained at a constant level until the transient event has ended. Once the event is over, the device will return to its original state, allowing the circuit to operate as normal.

The 3KASMC17AHE3_B/H is an ideal choice for protecting circuits from over-voltage transients, as it can handle high peak voltages and a wide variety of frequency and surge characteristics. In addition, the integrated circuit\'s high voltage rating makes it suitable for use in a wide range of applications.

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