3KASMC20AHM3_A/H Allicdata Electronics
Allicdata Part #:

3KASMC20AHM3_A/H-ND

Manufacturer Part#:

3KASMC20AHM3_A/H

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 20V 35.8V DO214AB
More Detail: N/A
DataSheet: 3KASMC20AHM3_A/H datasheet3KASMC20AHM3_A/H Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 35.8V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 83.8A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressor) devices are widely used in various electrical designs to protect against over-voltage and other transient variations in the power circuit. In particular, 3KASMC20AHM3_A/H is an advanced TVS device that offers superior protection together with low leakage current and low capacitance in a compact package.

In terms of application, the 3KASMC20AHM3_A/H is often used to protect sensitive equipment from over-voltage, ESD, EMI and other power transient events. Due to its high breakdown voltage of 20V, it is suitable for a wide range of applications including 5V, 3.3V, and even high-speed signal up to 1.2GHz. The small size of the package also makes it suitable for applications with tight spaces or space-constrained designs.

The 3KASMC20AHM3_A/H achieves low capacitance and low leakage current thanks to a unique capability called Static Plasma Impedance (SPI). The SPI technology works by generating a static plasma field in the gap between the metal electrodes, which is used to control the on-state and off-state of the device. This makes the 3KASMC20AHM3_A/H an ideal choice for low-speed, low-capacitance, or space-constrained designs.

In terms of working principle, the device works by using its dynamic voltage breakdown (DVB) capability to protect against voltage transients. When a transient event occurs, the DVB capability will reduce the voltage at both the drain and source electrode. This in turn reduces the current flow through the device and protects the circuit from further damage. The 3KASMC20AHM3_A/H also has built-in reverse-bias protection to ensure that the device does not fail under reverse-bias conditions.

The 3KASMC20AHM3_A/H offers significant benefits when used in power line and signal line protection. It is designed to offer protection even in harsh environments and is capable of withstanding surge voltages up to 20V. Furthermore, its low capacitance and low leakage current make it suitable for use in high-speed and low-capacitance designs. This makes it an ideal solution for applications that require superior protection with low leakage current and low capacitance in a small package.

The specific data is subject to PDF, and the above content is for reference

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