3KASMC26HE3_A/H Allicdata Electronics
Allicdata Part #:

3KASMC26HE3_A/H-ND

Manufacturer Part#:

3KASMC26HE3_A/H

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 26V 46.6V DO214AB
More Detail: N/A
DataSheet: 3KASMC26HE3_A/H datasheet3KASMC26HE3_A/H Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 64.4A
Base Part Number: 3KASMC26
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Series: Automotive, AEC-Q101, PAR®
Voltage - Clamping (Max) @ Ipp: 46.6V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The 3KASMC26HE3_A/H is a TVS diode that works to protect electronic circuits from overvoltage conditions. It is used in applications such as automotive electronics, industrial electronics, avionics, and telecommunications. The 3KASMC26HE3_A/H is often referred to as a bidirectional protection device, as it can protect circuits from both positive and negative overvoltages.

The 3KASMC26HE3_A/H is a two-terminal device. It consists of a designated anode plastic encapsulated diode (PED), an attention controlled single diode for bidirectional suppression, and a field-stop ring or guard ring to ensure controlled breakdown if needed. The device also has a breakdown voltage of 33V, a stand-off voltage of 24V, and a clamping voltage of 39V. Furthermore, it has a capacitance of 10pF, a voltage range of [-33V to 33V], and an IC leakage current of 10µA.

The principle of operation of the 3KASMC26HE3_A/H is based on the phenomenon of avalanche breakdown. When exposed to transient overvoltage, the PED will be reverse-biased and the energy of the overvoltage will be absorbed by the guards and the diode. The absorbed energy will cause the junction to break down and be diverted away from the circuit, thus protecting the circuit from damage. The device will also conduct current around the junction of the PED and the attention controlled single diode, allowing for the overvoltage to be safely dissipated.

In conclusion, the 3KASMC26HE3_A/H is a TVS diode used to protect electrical circuits from overvoltage conditions. It has a breakdown voltage of 33V, a stand-off voltage of 24V, a clamping voltage of 39V, and a capacitance of 10pF. Its principle of operation is based on the phenomenon of avalanche breakdown, wherein the absorbed energy will cause the junction to break down and be diverted away from the circuit, thus protecting the circuit from damage.

The specific data is subject to PDF, and the above content is for reference

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