3KP190-B Allicdata Electronics
Allicdata Part #:

3KP190-B-ND

Manufacturer Part#:

3KP190-B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 190V 325.5V P600
More Detail: N/A
DataSheet: 3KP190-B datasheet3KP190-B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 325.5V
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 9.7A
Series: 3KP
Voltage - Breakdown (Min): 199.8V
Voltage - Reverse Standoff (Typ): 190V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressors, or Transient Voltage Surge Suppressors) diodes are electronic devices that provide protection against destructive overvoltage transients. The 3KP190-B TVS diode is a unidirectional device with an open-circuit voltage rating of 190 volts and a peak pulsed power rating of 600 Watts. This type of diode is well-suited for applications where a high-speed response is needed to protect against overvoltage conditions.

The main application fields of the 3KP190-B are systems with low-voltage protection, such as personal computer and telecom power supplies. This TVS diode is also ideal for protecting low-voltage power circuits in appliances, radars, communications, motor-drives, and power supplies. This type of diode is suitable for use in automotive, consumer, and industrial applications that are subject to short-time overvoltage.

The working principle of the 3KP190-B is based on the well-known zener diode structure. This TVS diode has a metal oxide semiconductor (MOS) layer between the anode and cathode terminals. The MOS layer is designed to act as a switch when the applied voltage exceeds the breakdown voltage of the diode. When this occurs, the diode instantly switches to the conducting or “on” state, limiting the surge voltage across the diode to its breakdown value. This action enables the protection of electronic components downstream from the diode.

The 3KP190-B TVS diode also includes an integrated stress guard to protect the device and extend its life. This feature allows the diode to safely absorb over-voltage transients and dissipate the energy as heat. Additionally, the 3KP190-B features a unisotropic design that provides superior performance and reliability. The diode is also RoHS compliant and lead-free, making it an ideal choice for sensitive applications.

In conclusion, the 3KP190-B TVS diode is a highly reliable and effective device for applications where instantaneous protection against overvoltage transients is required. This diode offers a fast response, integrated stress guard, and unisotropic design, making it ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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