3KP9.0C Allicdata Electronics
Allicdata Part #:

3KP9.0C-ND

Manufacturer Part#:

3KP9.0C

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 9V 16.17V P600
More Detail: N/A
DataSheet: 3KP9.0C datasheet3KP9.0C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 16.17V
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 194.8A
Series: 3KP
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 9V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are semiconductor devices that are used to protect semiconductor circuits from high-energy, high-voltage electrical transients. The 3KP9.0C is a new type of TVS diode that offers superior performance and better protection against overvoltage transients. It is designed for use in a wide range of applications, from automotive to industrial electronics.

The 3KP9.0C consists of an internal Zener diode that is connected to an external bipolar junction transistor (BJT) source. When an overvoltage transient occurs, the internal Zener diode breaks down, allowing the current to flow through the BJT source and control the amount of energy that is transferred to the protected circuit. The bipolar junction transistor provides gain, voltage boosting, and a high current source to control the load voltage during the short pulse of the transient.

The 3KP9.0C is designed to protect circuits in a variety of electronic systems, including: automotive electronics, telecommunications, RF devices, DC-DC converters, high-speed datacom, and aerospace systems. Its superior performance makes it ideal for use in applications that require fast switching times and low EMI/RFI emissions. The device can also be used in high-frequency applications, such as mobile phones and tablets.

The working principle of the 3KP9.0C is based on its internal Zener diode. When an overvoltage transient occurs, the internal diode breaks down, and the current is determined by the gain of the BJT source. The breakdown voltage, current ratings and power dissipation of the Zener diode are determined by the type of device and its operating conditions. The internal Zener is connected to a controlled source, which is used to limit the amount of current flowing through the diode. The internal BJT source then acts as a voltage boosting device, reducing the overvoltage voltage to safe levels.

The 3KP9.0C provides excellent protection against electrical transients, offering a robust solution for a wide range of applications. The device is designed for use in both high-voltage and low-voltage protection systems. It is available in a variety of spike current and power dissipation ratings, and its performance is superior even at high frequencies. Its low power dissipation, low on-state resistance, and fast switching make it ideal for use in mobile devices, automotive electronics, and other high speed electronics applications.

The specific data is subject to PDF, and the above content is for reference

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