3SMBJ5917B-TP Discrete Semiconductor Products

Diodes and their counterparts, zener diodes, are simple electronic devices that can control the flow of electrical current through a semiconductor and manage a wide variety of behaviors and applications. The 3SMBJ5917B-TP is one such zener diode and is used for various applications. This article aims to explain the 3SMBJ5917B-TP, its application field and working principle.

3SMBJ5917B-TP Introduction

The 3SMBJ5917B-TP zener diode, otherwise known as a transient voltage suppressor or simply TVS, belongs to the family of Zeners. It is a low-power, unidirectional, non-polarized, voltage regulator diode with a nominal breakdown voltage of 17 volts. It is typically constructed with MOSFETs, making it suitable for the most power-intensive applications. Its maximum current rating is 58A, which adds to its durability and reliability in most situations.

Application Fields

The 3SMBJ5917B-TP is commonly used in a variety of applications because of its high level of power, current, and temperature capabilities. Most typically, it is used in automotive applications, such as voltage regulator circuits, hearing aid circuits, and household appliance power adapters. It can also be used in portable electronics, such as laptop computers and cell phones, due to its low power consumption. Finally, its nominal breakdown voltage of 17 volts makes it suitable for use in various telecommunications applications.

Working Principle

The working principle of the 3SMBJ5917B-TP is similar to the working of the other Zeners. When the voltage across this diode exceeds its nominal breakdown voltage, it begins to conduct current in the reverse direction. This current, in turn, limits the voltage across the device to its nominal breakdown value, which keeps it from reaching damaging levels. This basic principle of operation is what makes the 3SMBJ5917B-TP suitable for such a wide range of applications.

Conclusion

The 3SMBJ5917B-TP zener diode is a widely used device for managing various voltage regulation applications. Its MOSFET construction gives it a high level of power, current, and temperature capabilities, making it suitable for use in a wide range of applications. Its nominal breakdown voltage of 17 volts makes it particularly suitable for use in automotive, electronics, and telecommunications applications. Finally, its nominal breakdown voltage and reverse current limiting characteristics make it an integral part of voltage regulator circuits.