3SMBJ5927B-TP Allicdata Electronics

3SMBJ5927B-TP Discrete Semiconductor Products

Allicdata Part #:

3SMBJ5927BTPMSTR-ND

Manufacturer Part#:

3SMBJ5927B-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 12V 3W DO214AA
More Detail: Zener Diode 12V 3W ±5% Surface Mount DO-214AA (SMB...
DataSheet: 3SMBJ5927B-TP datasheet3SMBJ5927B-TP Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 6.5 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: SMBJ5927
Description

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Diodes - Zener - Single: 3SMBJ5927B-TP application field and working principle

A Diode is a two-terminal electronic or electrical device which is use to control the flow of electric current only in one direction. Zener diodes are commonly used to regulate voltage levels. The 3SMBJ5927B-TP Zener Diode provides a low profile, low forward voltage and high power dissipation. It is available in both DO-213AC JEDEC and standard surface mount packages.

The application field of 3SMBJ5927B-TP Zener Diode is in the areas of the design of power supply circuits, logic circuits, telecommunications and computer engineering. It is also used widely in DC-DC converters, voltage regulators and LED drivers. Furthermore, it is used widely for the protection of devices and circuits from the input of incorrect voltage levels or surges.

The working principle of a Zener Diode is based on the Zener Breakdown effect. In a diode, there is an electric field that is created which exerts a force on the electrons. When a reverse voltage is applied to the diode, the electric field increases, causing the electrons to become mobile. This mobile charge carriers are then able to freely break down the depletion region of the diode, leading to very small currents establishing themselves. This is known as the Zener Breakdown process.

The 3SMBJ5927B-TP Zener Diode has a wide range of operating temperature from -55°C to +150°C. It is also designed to have an ultra low capacitance for fast switch speeds. The maximum power dissipation at 25°C condition is 1000mW and the maximum zener voltage is 12.4V. It also has a series resonance frequency of 350MHz and a shunt capacitance of 0.40pF.

In other devices, such as Zener Diodes and TVS diodes, this breakdown effect is used in order to allow the current to flow in one direction, but to not allow it to flow in the other. This is achieved by applying a reverse voltage to the device, which causes a breakdown to occur and allows the current to flow. The 3SMBJ5927B-TP Zener Diode works by applying a reverse voltage to the diode, when this occurs a Zener breakdown process occurs and a current is allowed to flow through the device.

In summary, the 3SMBJ5927B-TP Zener diode is used widely in the design of power supplies and logic circuits. Its working principle is based on the Zener Breakdown process. It is designed to have a wide range of operating temperature and a maximum zener voltage of 12.4V. Power dissipation can be up to 1000mW and its series resonance frequency is 350MHz. The shunt capacitance of the diode is 0.40pF. This Zener diode provides a low profile, low forward voltage and high power dissipation.

The specific data is subject to PDF, and the above content is for reference

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