4210-52 RF/IF and RFID |
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Allicdata Part #: | 1046-1015-2-ND |
Manufacturer Part#: |
4210-52 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | pSemi |
Short Description: | IC RF SWITCH SPDT 50 OHM 8-MSOP |
More Detail: | RF Switch IC General Purpose SPDT 3GHz 50 Ohm 8-MS... |
DataSheet: | 4210-52 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraCMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
RF Type: | General Purpose |
Topology: | Reflective |
Circuit: | SPDT |
Frequency Range: | 10MHz ~ 3GHz |
Isolation: | 25dB |
Insertion Loss: | 0.45dB |
Test Frequency: | 2GHz |
P1dB: | 14.5dBm |
IIP3: | 33.5dBm |
Features: | DC Blocked, Single Line Control |
Impedance: | 50 Ohm |
Voltage - Supply: | 2.7 V ~ 3.3 V |
Operating Temperature: | -40°C ~ 85°C |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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RF switches, also referred to as RF relays, are widely used in a variety of applications in order to enable or disable an RF signal. They are used for antenna switching between multiple receivers or in transmit/receive systems to prevent transmit signals from entering the receiver. Other applications include switching multiple paths for signal paths, amplifier, attenuator control and load sharing. The most common on/off configuration utilizes PIN diode switches.
The UG-4210-52 is a high dynamic range PIN diode switch, characterized by its low insertion loss of < 0.2dB. It\'s designed for use in switching and routing systems, where a large dynamic range is required and low insertion loss is essential. The device can handle up to 30 dBm in both the on and off states with low insertion loss, and up to 10 dBm in the on-state or 20 dBm in the off-state. The frequency range of this switch is 500 MHz to 8 GHz, making it suitable for use in a wide range of applications and systems.
The working principle of the UG-4210-52 is based on PIN diodes. A PIN diode is a semiconductor diode that consists of an intrinsic layer, an undoped layer and a heavily doped p-type layer. When a dc bias voltage is applied to the PIN diode, electrons and holes are created in the region of the intrinsic and undoped layer and form the "PIN" layer. This layer acts as a resistor or an extrinsic region. When the applied bias voltage is increased, more current can be generated due to the movement of more electrons and holes. Hence, the PIN diode can act as a switch with high impedance in the off-state and low impedance in the on-state.
Therefore, in its basic form, the UG-4210-52 can be used as a two-state switch. In the on-state, the PIN diode is forward biased, enabling the signal to pass through the switch, and in the off-state, the PIN diode is reverse biased, blocking the signal flow. The bias control voltage and RF drive voltage can be adjusted to suit different applications. For example, the bias control voltage can be adjusted to achieve a lower off-state isolation as well as lower insertion loss.
The UG-4210-52 is a versatile RF switch that is suitable for a range of applications, including antenna switching, attenuator control, amplifier switching, and signal path switching. Its high dynamic range, low insertion loss, and broad frequency range makes it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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