42108HS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The working principle and application field of the 42108HS transistor is relevant to the operation of transistors, particularly those of the bipolar junction type (BJT) used in RF (Radio Frequency) applications. To understand this, it is best to first start off with an overview of how bipolar junction transistors work. Bi-polar transistors comprise three terminals, designated as emitter, base and collector. By applying a voltage between the emitter and base, current can be generated through the base-emitter region, which then flows through the collector-emitter junction. The device is then said to be ‘ON’ and can provide amplification of input signal applied at the base. One key feature of bipolar transistors is their stability, in that the level of current generated through the base-emitter junction is largely independent of temperature variation, meaning that devices with substantial levels of RF power can be produced with greater accuracy.

Moving onto the 42108HS transistor specifically, this is a reliable bipolar transistor designed for use in RF systems, such as those for wireless communications. It is designed to handle high frequencies, allowing for high-speed operation of the transistors used in RF applications. It has a low Cob (0.5pF) and high Ft (5GHz), making it ideal for use in a wide range of applications from power amplifiers to mixers and modulators. Its low current gain, HFE, of 20-50 gives it a reliable and accurate gain response over a range of frequencies. Also, its Ceb (1pF) and Cbc (2pF) ensure that its output current remains stable and accurate over a range of temperatures.

In terms of its application field, the 42108HS transistor is suitable for use in cellular and broadcast RF power amplifiers, transmission line drivers and synthesizer circuits. It is also capable of use in various radio receiver stages, such as IF amplifiers, mixing and AGC circuits, as well as baseband amplifiers and antenna configurations. Its low current gain and high Cob make it particularly suitable for applications where high power levels are required and fast switching speeds are advantageous for amplifying high frequency signals. Its steady performance over a range of temperatures further makes it suitable for automotive and industrial RF applications.

In summary, the 42108HS transistor has a working principle based in the bi-polar junction transistor (BJT) model and is commonly used in radio frequency (RF) applications due to its low Cob, high Ft and low current gain (HFE). Typical applications for the device are cellular and broadcast RF power amplifiers, transmission line drivers and synthesizer circuits, as well as various radio receiver stages. The device offers reliable and accurate gain response over a range of frequencies and temperatures, making it suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference