Allicdata Part #: | 869-1118-2-ND |
Manufacturer Part#: |
50A02MH-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.5A MCPH3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 690MHz 600m... |
DataSheet: | 50A02MH-TL-E Datasheet/PDF |
Quantity: | 15000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 120mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 10mA, 2V |
Power - Max: | 600mW |
Frequency - Transition: | 690MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-MCPH |
Base Part Number: | 50A02MH |
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The 50A02MH-TL-E is a transistor derived from the family of bipolar junction transistors (BJTs). It is a single type BJT with a maximum collector current (Ic) of 0.5 A and a peak current gain (β) of 25. Molded into a 4-pin SOT-223 package, its collector-base breakdown voltage (V(BR)CBO) is 50 V, while its emitter-base breakdown voltage (V(BR)EBO) is 5 V. The operating temperature of 50A02MH-TL-E ranges from -55°C to 150°C and the maximum collector-emitter voltage is 30 V.At room temperature between 10 to 25°C, the collector-base transistor gain (hFE) is 100 or greater while its maximum collector-emitter saturation voltage (VCE(sat)) is 0.5 V. This transistor also has a maximum storage and operating junction temperature of 175°C and 150°C respectively.The 50A02MH-TL-E transistor is primarily used in switching circuits and low frequency applications such as relay drivers, small signal amplifiers, and driver circuits. It is considered to be a low-power transistor device as it has a very low input capacitance (Ci) of 350 pF.The 50A02MH-TL-E works using the principle of bipolar transistor action. It consists of three semiconductor layers referred to as the emitter, base and collector. When the emitter-base circuit is forward biased, it sets the transistor in its active state and the electrons then flow through the collector. The transistor can also be fully saturated or turned off completely by disabling the collector-base junction.The transistor also exhibits a common emitter configuration. This means that the base terminal has a low effective input impedance compared to the emitter, while the collector has a high output impedance. This configuration helps the transistor in having high current gain and input resistance.The 50A02MH-TL-E is a very popular component when it comes to performing low-level switching operations. Its working is simple and intuitive, allowing for more safer and efficient operations over other transistor based devices. Its high input resistance and low input capacitance also provide a wide range of applications and improve efficiency.
The specific data is subject to PDF, and the above content is for reference
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