Allicdata Part #: | 50A02SS-TL-EOSTR-ND |
Manufacturer Part#: |
50A02SS-TL-E |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.4A SSFP |
More Detail: | Bipolar (BJT) Transistor PNP 50V 400mA 690MHz 200m... |
DataSheet: | 50A02SS-TL-E Datasheet/PDF |
Quantity: | 32000 |
8000 +: | $ 0.04108 |
16000 +: | $ 0.03651 |
24000 +: | $ 0.03423 |
56000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 400mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 120mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 10mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 690MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-81 |
Supplier Device Package: | 3-SSFP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors (BJTs) are a type of transistor that uses a base-emitter junction and a collector-base junction to create an electrical signal. The base-emitter junction is formed when electrons are injected into the emitter and then diffuse through the base. The collector-base junction is formed when the injected electrons then recombine with holes in the collector. This creates a current flow between the collector and the base, which controls the current flow between the collector and the emitter. This allows the transistor to act as a switch to control the current flow to a load.
The 50A02SS-TL-E has a maximum collector-emitter voltage of 30 V, and a maximum collector current of 3 A. It is designed to be able to switch between two different “on” and “off” states. The transistor also has a maximum DC gain of 500, making it capable of providing high power switching capability. Its maximum operating frequency is 500 kHz, allowing for fast switching.
The 50A02SS-TL-E is typically used in applications such as motor drives, switching and control, lighting controls, voltage regulators, and HVAC. It is also suitable for use in high-voltage power delivery applications, such as electric vehicles, telecom systems, and windmills. In these applications, the transistor can be used to control the high voltage power supply, switch power paths, and provide fast switching capability. In addition, the device also has a wide temperature range, from -55°C to +175°C, making it suitable for use in a wide range of temperature conditions.
The 50A02SS-TL-E is an ideal choice for a wide variety of electronic applications, providing reliable and high-powered switching capability across a wide temperature range. The device can be used in motor drives, switching and control, lighting controls, and high-voltage power delivery applications.
The specific data is subject to PDF, and the above content is for reference
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