5KP40C

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TVS (Transient Voltage Suppressor) diodes, also known as protective diodes or avalanche diodes, are widely used in electronic circuits for protection against electro-static discharge, lightning strike, inductive switchgear, and other transient voltage events. The 5KP40C is one type of TVS diode which is designed to protect systems and components from transient over-voltage faults.

5KP40C is a unidirectional device, and its application field includes many power electronic products which require over-voltage protection, such as switch-mode power supply, power adapters, LED drivers, programmable logic controllers, and automation systems. The 5KP40C can also be used for transient voltage protection in data communication networks, computers, and servers.

The 5KP40C is a silicon avalanche diode with peak pulse power rating of 500W, a breakdown voltage rating of 40V and a clamping voltage of 50V. It has a peak surge current rating of 70A and a peak reverse off-state leakage current of 5mA. The 5KP40C has a maximum storage temperature of 175°C and a maximum operating junction temperature of 150°C. The device is available in lead-free SSO2 SMD package.

The working principle of 5KP40C is based on its avalanche breakdown voltage. When the input voltage exceeds the breakdown voltage, the avalanche diode rapidly conducts current until the voltage drops below the avalanche voltage. The internal structure of the device contains a PN-junction which contains a heavily-doped N region and a lightly-doped P region. When the reverse voltage across the device exceeds the avalanche breakdown voltage, a large number of electrons in the N region are suddenly accelerated by the electric field and create other carriers in the P region thus resulting in optical breakdown.

The 5KP40C is a fast responding device which exhibits low-surface temperature and fast response time to prevent over-voltage damage to the system component. The device has a low reverse leakage current thus allowing for improved system reliability. The device also features low parasitic inductance, making it suitable for use in high frequency applications. In addition, the device is designed with optimized features including thermally enhanced construction which provides better power dissipation and pulse current handling.

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