5KP48A-E3/51 Allicdata Electronics

5KP48A-E3/51 Circuit Protection

Allicdata Part #:

5KP48A-E3/51-ND

Manufacturer Part#:

5KP48A-E3/51

Price: $ 1.43
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 48V 77.4V P600
More Detail: N/A
DataSheet: 5KP48A-E3/51 datasheet5KP48A-E3/51 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
750 +: $ 1.29970
Stock 1000Can Ship Immediately
$ 1.43
Specifications
Voltage - Clamping (Max) @ Ipp: 77.4V
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 64.6A
Series: TransZorb®
Voltage - Breakdown (Min): 53.3V
Voltage - Reverse Standoff (Typ): 48V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS or Transient Voltage Suppressor Diodes are vital components that provide protection against harmful voltage transients generated by Lightning, electrostatic discharge & high current inductive events. 5KP48A-E3/51 is a state-of-the-art ultra compact and lightweight TVS diode which provides protection in a wide range of applications. This silicon-based diode is designed to be used in a wide range of industrial and commercial applications for protecting electrical systems, circuits and components from harmful voltage transients.

This diode provides a peak pulse power capability of 13 500 W in a small size, and it has a working voltage range of 1 to 48 V. It has a very wide operating temperature range and its maximum operating temperature is -55? to +150°C. The device is compact and has a maximum height of 0.398 µm and a minimum weight of 0.0034 lb making it suitable for extended use in space constrained applications. Additionally, in applications where space is limited the 5KP48A-E3/51 diode requires comparatively low mounting force and minimal mounting hardware.

The 5KP48A-E3/51 diode is designed to protect sensitive equipment and electronic components from Voltage Transients up to 13500W. Its unique design allows for minimal loading current, minimal leakage current and minimal temperature rise. It includes a monolithic PN junction with a single hybrid structure combined with an internal device structure to ensure longer lifetime service and better protection.

The 5KP48A-E3/51 provides overvoltage protection for power, data and signal lines in consumer electronic devices used in high-end, automotive and industrial applications. It has low reverse leakage current, excellent thermal stability and temperature derating. The device is designed for surface mount applications for fast and reliable board assembly with low mounting force.

The working principle of TVS Diodes can be broadly understood as having three main parts – a PN Junction, a Zener Diode and a Silicon Oxide Layer. The PN Junction is the diode’s main component and controls the direction of current; the Zener Diode helps to regulate voltage when excessive voltages are applied; and the Silicon Oxide Layer helps protect the device by preventing current from entering the PN Junction and damaging it. During normal operation, TVS Diodes operate like a normal diode, allowing a current to flow in one direction. When a transient voltage spike occurs, the Zener Diode acts as a clamp, limiting the voltage to a safe level. The Silicon Oxide Layer prevents harmful currents from entering into the PN Junction, which might damage the device.

In summary, the 5KP48A-E3/51 diode is an advanced device designed to provide overvoltage protection in a wide range of power, data and signal line applications for consumer electronic devices across a variety of industries. It includes an efficient monolithic PN junction with a single hybrid structure combined with an internal device structure to provide exceptional performance. Its compact design allows for faster and reliable board assembly, minimal loading current, minimal leakage current, minimal temperature rise and long lifetime protection.

The specific data is subject to PDF, and the above content is for reference

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