7005L45JI8 Allicdata Electronics
Allicdata Part #:

7005L45JI8-ND

Manufacturer Part#:

7005L45JI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ...
DataSheet: 7005L45JI8 datasheet7005L45JI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Description

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Memory is an essential component of modern electronic devices and systems. Over the past decades, memory technologies have advanced rapidly, bringing a wealth of possibilities to the industry. As memory continues to evolve, a variety of application fields have emerged to accommodate the power and potential of this technology.

The 7005L45JI8 is a high-speed, ultra-low power dynamic random access memory (DRAM). It is also a low-power memory optimized for memory-intensive workloads. This type of memory is suitable for applications that require power efficiency, such as embedded systems, mobile devices, and medical device applications.

This memory is composed of dynamic cells, which are gradually charge and discharge. They retain their data until their energy is drained (such as when the system is powered off). Each cell contains a capacitor and a transistor. The capacitor stores the data, and the transistor controls the flow of charge to the capacitor. This dynamic memory has the advantage of having a minimal power consumption compared to static RAM.

The 7005L45JI8 can allow a system to access large amounts of data quickly. For instance, operation in burst mode can allow the memory to access data at speeds of up to 3500 MB/s. This offers great performance for high-speed operation, including those with large bandwidth of data. This type of memory is often employed in high-performance applications that require rapid and reliable access.

The 7005L45JI8 memory is capable of operating with very low power consumption. This makes it an ideal solution for embedded and mobile devices that need to be operated for longer periods of time without the need for frequent recharging. This low-power memory is available in various packages, allowing scalable memory densities ranging from 16Mbit to 4Gbit.

In conclusion, the 7005L45JI8 high-speed, ultra-low power DRAM is ideal for a wide range of memory-intensive workloads. This memory is optimized for rapid data access, while also providing efficient power consumption even in the smallest packages. Its advantages make it a viable solution for embedded and mobile applications, as well as any other device or system with performance requirements beyond what traditional memory technologies can offer.

The specific data is subject to PDF, and the above content is for reference

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