7005S35JI8 Allicdata Electronics
Allicdata Part #:

7005S35JI8-ND

Manufacturer Part#:

7005S35JI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ...
DataSheet: 7005S35JI8 datasheet7005S35JI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Base Part Number: IDT7005
Description

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Memory: 7005S35JI8 Application Field and Working Principle

Memory is an integral part of our modern computing and communications systems. Memory chips are used to store and access data quickly and reliably, while memory cards and USB flash drives store large amounts of data and are commonly used for backing up data. The 7005S35JI8, a member of the 7005 family of multi-purpose memory products, is a cost-effective device that combines the best of both worlds: high performance and low cost.

Application Field of 7005S35JI8

The 7005S35JI8 is a nonvolatile memory device with a 3V operating voltage, which makes it suitable for use in a wide range of applications. These include portable electronics devices, automotive systems, medical systems, communications and industrial control systems, and other applications where power savings, stability and reliability are paramount.

Working Principle of 7005S35JI8

The 7005S35JI8 is a nonvolatile EEPROM device, which means it can store data even when the power source is turned off. It has an array of 16,384 x 8 memory cells, organised as two banks of 8192x8. It uses a Schottky diode as the reading pre-amplifier, and the data is written or erased by Fowler-Nordheim tunneling. It has an access time of 15ns and a typical read-write cycle time of 4S, making it fast and reliable.

The device has an in-system re-programmable feature, which means that the data stored in its memory cells can be rewritten without having to replace the chip. It is also capable of sustaining 125mV of write-disturb, which makes it resistant to write errors.

The 7005S35JI8 also has low power consumption capabilities, as it typically draws less than 2µA in standby mode and does not require a bulk capacitance or a NCMOS RAM. This makes it suitable for use in portable and low-cost applications.

Conclusion

The 7005S35JI8 is a cost-effective, high-performance memory device, which is suitable for a wide range of applications. Its low power consumption and re-programmable features make it ideal for portable and low-cost applications, while its fast access time and write-disturb resistance make it an ideal choice for stable and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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