7009L20PF Allicdata Electronics
Allicdata Part #:

7009L20PF-ND

Manufacturer Part#:

7009L20PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 1Mb (128K...
DataSheet: 7009L20PF datasheet7009L20PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7009
Description

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7009L20PF has become increasingly popular and is currently the memory product of choice for many applications. It is a memory device consisting of a single chip, with a storage capacity of up to 128 KB. It has been designed for use in applications that require efficient and reliable data storage and retrieval.

7009L20PF is characterized by a unique architecture that enables it to efficiently store and retrieve data in a manner that exceeds the capabilities of traditional memory devices. In terms of its application field, 7009L20PF is commonly used in cell phones, consumer electronics, network infrastructure, and automotive electronics.

7009L20PF incorporates a unique memory cell array that is capable of storing and retrieving data much faster than traditional memory technologies. This is enabled by its cell structure, which is made up of three layers. These layers are comprised of an interface layer, a logic layer, and a modifiable layer. Each cell contains two plates that hold the cell’s data, which can be modified by the user on demand.

The logic layer of the memory cell array processes the data, while the interface layer controls the read and write operations. The latter also works in conjunction with other components in the device to provide access to the cells while driving the device’s internal functions.

The modifiable layer is a crucial part of the memory cell array, as it is responsible for writing and erasing the data stored in the cells. This layer contains an array of transistors, which are triggered by the logic layer to perform those operations.

The modifiable layer can also be programmed to perform several other functions in order to support the device’s operations. For instance, it can be used to provide user-defined access control, data protection, and reliable self-test capabilities.

In order to provide efficient and reliable operation, 7009L20PF includes a few other features. These include an on-chip ring oscillator, which stabilizes the device’s operating frequency; error detecting and correction (ECC) circuitry, which enhances data protection; and a programmable interface, which allows for faster read/write operations.

Overall, the 7009L20PF memory device is best suited for applications that require dependable, high-level data storage and retrieval performance. Its unique architecture and features provide efficient and reliable operation, making it the memory product of choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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