7014S12J8 Allicdata Electronics
Allicdata Part #:

7014S12J8-ND

Manufacturer Part#:

7014S12J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 36K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 36Kb (4K ...
DataSheet: 7014S12J8 datasheet7014S12J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 36Kb (4K x 9)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Base Part Number: IDT7014
Description

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The 7014S12J8 is a type of static random access memory (SRAM) specifically designed for use in large multithreaded microprocessors and also embedded systems. This type of memory combines fast, low-power operation with the most advanced design features. It is commonly used in the fields of networking, communications, and embedded systems.

The 7014S12J8 is a type of non-volatile SRAM with the latest advanced features. It offers improved performance, low-power operation, and long data retention times. It also provides a wide range of voltage compatibility and a high degree of integration with other chips, making it ideal for use in space-constrained and cost-sensitive applications.

7014S12J8 operates using a write-through or write-back architecture. In the write-through storage architecture, all data written in the memory is immediately written out to the host system. This type of architecture is generally used in single-threaded processors, where writing out data can be done more efficiently than in a multithreaded architecture. In a write-back storage architecture, data is first written in the memory, and then written out when a certain amount of data has been accumulated. This is a more effective storage architecture for multithreaded processors.

The 7014S12J8 utilizes a dual state array with the least significant bit (LSB) representing data validity. This allows for data protection in the event of power loss or other environmental factors. The memory array is organized as an eight-bit-wide, eight-byte-long array with a programmable address width of up to 128 bits. It is clocked at up to 300 MHz and is accessed via the CMOS address/data bus.

The 7014S12J8 has numerous advantages over other types of memory, such as increased data storage capacity, high speed data access, excellent reliability and scalability. In addition, it also features special circuitry that reduces power consumption and minimizes the amount of bank conflicts, making it ideal for use in applications that require quick data access and low-power operation. The 7014S12J8 is also easy to integrate with other chips, such as processors and analog I/O devices.

The 7014S12J8 provides an efficient and reliable way to store, access and protect large amounts of data in a small, low-power package. Its broad range of features and capabilities make it ideal for use in embedded systems, networking and communications applications, and large multithreaded processors.

The specific data is subject to PDF, and the above content is for reference

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