7024L35PFI Allicdata Electronics
Allicdata Part #:

7024L35PFI-ND

Manufacturer Part#:

7024L35PFI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (4K ...
DataSheet: 7024L35PFI datasheet7024L35PFI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Description

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Memory: 7024L35PFI Application Field and Working Principle

7024L35PFI, contained in the FPS memory family, is widely used in industrial computing, such as digital instrument and controller. It\'s a ferroelectric random access memory, which is non-volatile, fast and reliable.

It consists of ferroelectric capacitor, silicon thin-film transistor and sense amplifier integrated on a single substrate. As ferroelectric capacitors possess better data storage capability than other types of capacitors, it has become an industry standard for storing data in applications such as industrial controllers, medical imaging, space and military systems.

The working principle of the 7024L35PFI is based on the properties of ferroelectric materials. A ferroelectric material is typically composed of a metal oxide composite that exhibits a spontaneous electrical polarization. When the capacitors are connected to power, the ferroelectric material is reversibly polarized, allowing electrons to move from one part of the material to the other.

When the power supply is removed, the voltage across the ferroelectric material will diminish, causing the electrons to become trapped in the material. This trapped charge creates an electric field that can store a bit of data, so long as the power supply is disconnected. Once the power supply is reconnected, the electric field reverts to its original state.

In addition to data storage, the 7024L35PFI also offers fast switching speed, which is important when data must be written and read quickly. By using the ferroelectric material, the time required to write a bit to the memory is extremely short, allowing for high-speed read/write operations.

The 7024L35PFI is also incredibly stable, with able to hold data for long periods of time without degradation. This is accomplished by the low leakage current that is generated in the ferroelectric material. This low leakage current yields a higher level of data retention than other types of memories.

Because of its advantageous properties, the 7024L35PFI is an excellent choice for many industrial applications. It offers fast, reliable data storage, with data retention capabilities that are far superior to other types of memories. As it has been proven to be stable and able to handle large amounts of data over long periods of time this memory is certainly a viable solution for industrial computing.

The specific data is subject to PDF, and the above content is for reference

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