7024S55GB Allicdata Electronics
Allicdata Part #:

7024S55GB-ND

Manufacturer Part#:

7024S55GB

Price: $ 144.84
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 84PGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (4K ...
DataSheet: 7024S55GB datasheet7024S55GB Datasheet/PDF
Quantity: 1000
21 +: $ 131.67900
Stock 1000Can Ship Immediately
$ 144.84
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)
Description

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Memory

The 7024S55GB is a type of memory that is typically used in applications that require large amounts of high-speed memory such as machine learning and data analytics. It is designed to offer superior performance and reliability in comparison with other similar products. Memory is an important component of computers, and the design and implementation of the 7024S55GB reflects this.

Application Field

The 7024S55GB is ideal for applications requiring high memory bandwidth and/or high reliability. These applications include machine learning, computer vision, image processing, robotics, artificial intelligence, and HPC applications such as financial modelling and scientific computing. It is also suitable for high-performance server applications such as databases and web hosting. The 7024S55GB is also well suited for embedded applications such as automotive, industrial automation, and embedded systems.

Working Principle

The 7024S55GB is a DRAM-based memory device. DRAM stands for Dynamic Random Access Memory, which is a type of computer memory that stores data in a volatile fashion. This means that the information stored in the memory must be constantly refreshed in order to remain valid. The 7024S55GB is designed to offer superior performance and reliability due to its highly advanced DRAM architecture. The device is constructed using multiple layers of DRAM cells arranged in a structure that reduces latency and provides high memory bandwidth.

The device is constructed using stacked die technology, which allows for higher memory density and increased data bandwidth. It is also equipped with advanced error correction and coding technologies, which reduce the chances of errors occurring. These features provide the 7024S55GB with superior performance and reliability.

Conclusion

The 7024S55GB is a high-performance and reliable memory device that is suitable for various applications, such as machine learning, computer vision, image processing, HPC, and embedded systems. It is designed using advanced DRAM architecture and is constructed using stacked die technology, which makes it highly reliable. Furthermore, it is equipped with advanced error correction and coding technologies, which make it more reliable than other similar products.

The specific data is subject to PDF, and the above content is for reference

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