7027L20PFI Allicdata Electronics
Allicdata Part #:

7027L20PFI-ND

Manufacturer Part#:

7027L20PFI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (32...
DataSheet: 7027L20PFI datasheet7027L20PFI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7027
Description

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7027L20PFI is a type of memory device developed by the Computer Memory Group. It provides high-performance data storage and retrieval at an affordable price. In the following sections, we discuss the application field of 7027L20PFI, how it works, and the advantages it offers over competing memories.

Application Field

7027L20PFI is designed for use in industrial and automotive applications. It is an ideal choice for equipment that requires frequent data updates, such as data logging systems, process controllers, and machine controllers. 7027L20PFI is highly reliable and robust, capable of performing in harsh environments, making it especially suitable for usage in automotive and industrial applications.

Working Principle

The 7027L20PFI works by storing electrical charges in memory cells. These cells are arranged into "banks," each containing 8192 selectable memory elements. Memory locations can be accessed by using the address and data lines to select the desired location. The data can then be read or written to the memory. Data is written by changing the charge stored in a memory cell, and data is read by measuring the charge of a memory cell and outputting it relative to a reference voltage.

The 7027L20PFI utilizes a single-transistor per cell (1T1C) type of DRAM cell, rather than the more commonly used two-transistor (2T2C) type. This reduces the number of transistors required to store a single bit of information, improving performance, power efficiency, and manufacturability.

Advantages

The 7027L20PFI provides several advantages over competing memories. It has excellent performance and power efficiency, allowing it to operate in even the most demanding applications. It is also highly reliable and durable, providing years of reliable operation and protection from environmental factors. Furthermore, it offers excellent data access times, and is easy to integrate into new or existing assemblies.

In conclusion, the 7027L20PFI is a robust and reliable memory device suited for use in industrial or automotive applications. Its excellent performance and power efficiency make it an ideal choice for applications requiring frequent data updates. Finally, its easy integration and long-term durability ensure that it will perform reliably throughout its long service life.

The specific data is subject to PDF, and the above content is for reference

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