7027S35PF8 Allicdata Electronics
Allicdata Part #:

7027S35PF8-ND

Manufacturer Part#:

7027S35PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (32...
DataSheet: 7027S35PF8 datasheet7027S35PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7027
Description

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The 7027S35PF8 memory is a type of memory known as non-volatile Flash memory. It is composed of many Flash cells, each containing a few bits of data. Unlike other types of memory, Flash does not require power to maintain its data, meaning that the data stored in it remains intact even when the power is off. This makes the 7027S35PF8 ideal for applications which require the data to be stored for long periods of time, while still being accessible quickly.

The 7027S35PF8 is typically used in applications where the data stored needs to be secure, yet accessible. For example, it is used to store BIOS settings, digital certificates and encryption keys. It can also be used in applications such as digital storage devices, including cameras, mp3 players and USB flash drives.

The flash memory cell works by storing a small number of electrons in a floating gate, which is situated between two other conducting gates. When the cell is powered up and the gate is opened, the electrons move through the three gates and create a charge which can be measured and thus read out. Similarly, when data is to be stored, a small electrical pulse is sent to the floating gate which “traps” the electrons, thus preventing them from being read out. This is how the data is stored in the memory cell.

To make the memory easier to access, the 7027S35PF8 has a controller which is responsible for managing the I/O operations and handling the NAND flash. The controller reads a sector of data from the NAND flash and then buffers it in an internal memory, waiting for the host CPU to access it. Once the host has finished reading the data, the controller commands the flash chip to switch the direction of the write operation, so data can be written back to it.

The 7027S35PF8 memory is widely used in many different applications due to its non-volatility, reliability, low cost and speed. It is capable of high performance, with transfer rates up to 35 MB/s and a sustained read/write performance of 20K IOPS. Its low power consumption also makes it ideal for use in portable devices, as well as desktop and server systems. In addition, the 7027S35PF8 is backward compatible with earlier-generation NAND flash architectures, making it easy to upgrade to a newer model.

In conclusion, the 7027S35PF8 is a type of non-volatile Flash memory, which is used in a variety of applications due to its many advantages, such as reliability, speed, low cost and low power consumption. With its controller and internal memory, the 7027S35PF8 is capable of high performance and is backward compatible with earlier models, making it ideal for many different applications.

The specific data is subject to PDF, and the above content is for reference

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