7027S35PF Allicdata Electronics
Allicdata Part #:

7027S35PF-ND

Manufacturer Part#:

7027S35PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (32...
DataSheet: 7027S35PF datasheet7027S35PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7027
Description

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The 7027S35PF is a type of dynamic Random Access Memory (DRAM) used primarily in computer applications. It is characterized by its fast access time of around 35ns, making it an ideal choice for high performance applications requiring quick data storage and retrieval. This type of memory is widely used in memory-sensitive areas like gaming and graphics applications, as well as for data-intensive processing tasks. Its high-performance characteristics make the 7027S35PF an attractive choice for both consumer and corporate-level applications.

The 7027S35PF contains six data pins, including four address pins, CE, CS and OE. These address pins are used to store information in the memory cell, while the CE and OE pins are responsible for retrieving the data. The CS pin is a power management pin and is used to enable or disable the memory cell when necessary. It is important to note that these pins cannot be used to directly write to the memory cell; instead, data is written through the use of special write enable signals.

In terms of working principle, the 7027S35PF utilizes a transistor capacitor memory cell, which stores the bits of data. This cell works by storing electrons at the capacitor. When a read signal is applied to the cell, the electrons move from the capacitor to the transistor, indicating the current state of the bit - logic 0 or logic 1. During the writing process, the state of the cell is changed by reversing the flow of electrons from the transistor to the capacitor - 0s are written by moving electrons from the transistor to the capacitor and 1s are written by moving electrons from the capacitor to the transistor.

The 7027S35PF is a cost-effective, reliable and high performance memory component, making it an excellent choice for memory sensitive applications like networking, gaming, media and graphics. Its fast access time makes it possible to reliably access data quickly, enabling the system to process data more efficiently. In addition, the 7027S35PF is designed to offer higher stability and longer life, providing users with a cost-effective solution that can be used for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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