Allicdata Part #: | 70914S20PF/8029-ND |
Manufacturer Part#: |
70914S20PF/8029 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 36K PARALLEL 80TQFP |
More Detail: | SRAM - Dual Port, Synchronous Memory IC 36Kb (4K x... |
DataSheet: | 70914S20PF/8029 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 36Kb (4K x 9) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 80-LQFP |
Supplier Device Package: | 80-TQFP (14x14) |
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70914S20PF/8029 is a microcomputer-based static random access memory (SRAM) integrated circuit, which features high-density, high reliability, and multiple functions. It has a wide range of applications in medical, aerospace, automotive and industrial fields. The main function of this device is to store and retrieve data in an efficient, reliable and cost-effective manner.
The 70914S20PF/8029 integrated circuit has a self-contained memory array, address decode logic and internal power conditioning circuitry. It has sixteen address lines, which allows for a total of 65,536 (216) data bits to be stored. The SRAM is organized as a matrix of rows and columns, where each row contains 8 bits of memory, and each column contains 8 bits of addressable memory space. The address decoding logic for this device is controlled by a dedicated instruction register (DRIR), which is connected to the address lines. Once the device is powered, the DRIR will begin the decoding process.
The data stored in the 70914S20PF/8029 SRAM is stored in 8-bit (byte) modules. Each of the eight bits of data is contained in a single cell, which is addressed by the 16-bit address lines. Upon receiving an instruction, the DRIR will trigger the device to latch the data contained in the corresponding cells. In addition to this, the DRIR also controls the internal power conditioning circuitry in order to supply the necessary signal and power to the memory array.
The 70914S20PF/8029 can also be used for dynamic random access memory (DRAM) applications. This type of device is used to store variable-length data words, which can be read or written to a given address. This device is also capable of reading and writing data to specified addresses on the memory array.
In addition to its main purpose as a storage device, the 70914S20PF/8029 has several additional features. These include: an interrupt capability, which can be used to generate hardware interrupts; a reset capability, which allows the device to be reset without power cycling; and a chip select capability, which allows the device to select between multiple memory arrays.
The 70914S20PF/8029 is a very versatile and reliable device, which can be used in a wide range of applications. The wide range of applications for this device include medical, aerospace, automotive, and industrial fields. This device is used in applications where ultimate reliability and performance are essential.
In conclusion, the 70914S20PF/8029 is a microcomputer-based static random access memory (SRAM) integrated circuit, which has a wide range of applications and features high-density, high reliability, and multiple functions. This device can be used for both SRAM storage and DRAM applications, and is a very versatile and reliable device which can be used in many fields.
The specific data is subject to PDF, and the above content is for reference
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