70914S25PFI8 Allicdata Electronics
Allicdata Part #:

70914S25PFI8-ND

Manufacturer Part#:

70914S25PFI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 36K PARALLEL 80TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 36Kb (4K x...
DataSheet: 70914S25PFI8 datasheet70914S25PFI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 36Kb (4K x 9)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)
Description

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Memory: 70914S25PFI8 Application Field and Working Principle

The 70914S25PFI8 memory is a great solution for memory storage applications. It is designed to provide a robust and power-efficient solution that is ideal for performance-oriented applications. It is designed to meet the needs of a range of applications including digital signal processing (DSP), telecom systems, microprocessors, ASICs, embedded systems and other digital systems.

The 70914S25PFI8 is a low-power, non-volatile, memory device that stores up to 256MB of data or code. It has a flexible address and data interface, allowing easy access to the data. It provides up to 2.5V and 8 V supply voltages with a 1.2 V tolerant I/O for improved power efficiency. The device features a wide dynamic operating temperature range of 0°K to +85°C, allowing it to operate in extreme temperature environments.

The 70914S25PFI8 is optimized for applications requiring fast read and write performance. It offers single-cycle access times up to 70ns for code or data and a maximum sustained data transfer rate of 800MB/s. The 70914S25PFI8 also offers low latency and ultra-fast random data rates up to 1GB/s. The device has a flexible architecture that allows for read-modify-write cycles. It also supports various architectures including pipelined burst read, simultaneous read and write, and multiple address and data interfaces.

The 70914S25PFI8 employs a static CMOS circuit design for efficient power consumption. It offers lower power consumption than conventional SRAM devices, allowing it to be used in multiple systems with reduced energy consumption and improved performance.

The device supports various operations such as roll-over read, program and erase, write inhibit, read and write pause and erase suspend. It also features an enhanced error correction code (ECC) that improves data integrity over long read and write cycles. It also supports a wide variety of applications including pipelined burst mode, block operations, and random write and erase. In addition, the 70914S25PFI8 features a write protection capability that allows data stored in the device to remain unchanged when powered down.

Overall, the 70914S25PFI8 is an excellent choice for memory storage applications requiring high performance, low power consumption, and reliable data integrity. It is an optimal solution for performance-oriented applications across various fields.

The specific data is subject to PDF, and the above content is for reference

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