70914S25PFI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	36Kb (4K x 9)
Write Cycle Time - Word, Page:	--
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	80-LQFP
Supplier Device Package:	80-TQFP (14x14)

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70914S25PFI Memory

70914S25PFI memory is a memory component designed particularly for high-performance embedded systems. It is a semiconductor memory device that stores data permanently and is connected to a circuit board to retain data even after the power is turned off. This advanced memory component offers an integrated solution to memory requirements in high-performance embedded systems, such as in aerospace electronics.

Application field

70914S25PFI memory is the ideal solution for embedded applications that require reliable and efficient data storage and retrieval. It is suitable for use in a variety of applications, including aerospace, automotive, industrial automation, military, consumer systems, consumer electronics and medical devices.70914S25PFI memory components are capable of operating on extremely low power demands and high data-transfer rates, making them ideal for memory-intensive applications. As such, they are well suited for machine-vision systems, navigation systems, industrial control systems, medical imaging systems, automotive control systems and other real-time control applications.

Working principle

70914S25PFI memory technology combines a static random access memory (SRAM) and a non-volatile static random access memory (nvSRAM) in a single component. This technology is based on two types of circuit structures. The first is a bi-stable flip-flop, which uses two transistors and two power supply lines to store a logic state. The second is a dynamic flip-flop that uses a single transistor and a single power supply line.The SRAM portion of the component stores data in a volatile fashion and requires a continuous power supply to keep the logic state stored. The nvSRAM portion stores data non-voluntarily and requires a non-volatile power supply, such as an onboard battery, to keep the logic state stored.The nvSRAM uses a non-volatile memory read and write technique, which enables them to be used in applications where data must be retained even when power is removed from the system. This technique is based on a write/erase cycle, which is done by applying a voltage on the memory cell. The power supply feeding the memory cell is designed to keep the logic state stored, even when the power is turned off.70914S25PFI memory components are designed to reduce power consumption while providing high data-transfer rates. This is achieved by using advanced process technologies and design techniques to reduce the number of transistors required to store a given amount of data. Furthermore, the components are designed with a low-voltage operation and a power saving mode to further reduce power consumption.70914S25PFI memory components are designed to be capable of withstanding extreme environments and a wide temperature range, making them suitable for use in a variety of industrial and military applications. Additionally, with the advanced process technologies used in their design, these components are capable of withstanding radiation, shock and vibration.In summary, 70914S25PFI memory components are ideal solutions for memory requirements in high-performance embedded systems, such as aerospace electronics. These components are capable of operating on extremely low power demands and providing high data-transfer rates, making them ideal for memory-intensive applications. Furthermore, they are designed to withstand extreme environments and a wide temperature range, and are capable of withstanding radiation, shock and vibration.

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