709159L7PF8 Allicdata Electronics
Allicdata Part #:

709159L7PF8-ND

Manufacturer Part#:

709159L7PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 72K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 72Kb (8K x...
DataSheet: 709159L7PF8 datasheet709159L7PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 72Kb (8K x 9)
Write Cycle Time - Word, Page: --
Access Time: 7ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT709159
Description

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Memory: 709159L7PF8 Application Field and Working Principle

709159L7PF8 memory is a non-volatile random access memory (NVRAM) used in logic products. It is designed to provide high write performance and low power consumption, meeting design challenges faced by logic applications.

Application Field

The 709159L7PF8 semiconductor memory can be used in a variety of logic applications, including medical, industrial, automotive, consumer electronics, networking, and communication devices. The device offers features such as fast erase, fast data write, and fast configuration, which make it ideal for applications that need high-performance data storage.

Working Principle

The 709159L7PF8 semiconductor memory works by using a floating-gate field-effect transistor (FET). When a voltage is applied to the field-effect transistor, a channel is created, allowing current to flow through the transistor. When the current passes through the transistor, it creates and stores data. The data is stored in the form of electrons within the floating-gate, which is held in the non-volatile memory cell.

The 709159L7PF8 semiconductor memory uses a charge-coupled device (CCD) to read and write the data. When data is written to the non-volatile memory cell, a voltage is applied to the source and drain of the FET. When a current is passed through the FET, the electrons are displaced, creating a charge-coupled device. The CCD is then used to read and write the data, storing it in the non-volatile memory cell.

Benefits of 709159L7PF8 Memory

The 709159L7PF8 memory has several advantages for logic applications. It has a low standby power consumption, high write speeds, fast erase speeds, and a fast configuration cycle. The device also features built-in error detection and correction (EDC) circuitry, allowing for reliable data storage in harsh conditions. Additionally, the 709159L7PF8 is pin and footprint compatible with other parts in the family, making it easy to upgrade to a higher capacity device.

The 709159L7PF8 is a reliable and easy-to-use memory solution for logic applications. It offers a low power consumption, fast write and erase speeds, and a fast configuration cycle, making it well-suited for medical, industrial, automotive, consumer electronics, networking, and communication devices.

The specific data is subject to PDF, and the above content is for reference

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