Allicdata Part #: | 709269L9PF-ND |
Manufacturer Part#: |
709269L9PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Synchronous Memory IC 256Kb (16K... |
DataSheet: | 709269L9PF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 256Kb (16K x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 9ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT709269 |
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709269L9PF Memory, Application Field and Working Principle
709269L9PF Memory is a type of memory designed for ultra-high speed applications. It is designed to provide fast throughput and reliability without requiring high energy consumption. It is ideally suited for various applications, in particular for scientific computing, artificial intelligence, data processing, communications and networking, memory intensive embedded systems and automotive applications.
709269L9PF Memory is designed to feature fast latency, large capacities, flexible architecture, and low power. It offers 100ns latency and rates up to 1.2 GHz. It supports multi-layer addresses and two levels of distributed error correction. This type of memory also features a no wait-state architecture, allowing for the highest data throughput.
The 709269L9PF Memory is divided into logical units, to optimize memory access times. The logical units are organized into channels, each a dedicated bus with its own data bus width, power supply and access speed. The 709269L9PF Memory also supports a multi-chain dual differential architecture to ensure data integrity.
The working principle of 709269L9PF Memory is based on the notion of “hot spots” that appear in areas of the memory where data access requires frequent or many data movements. By actively avoiding or rapidly recovering from “hot spots”, the memory performance and reliability are enhanced. This type of memory utilizes redundant error correction coding to ensure data integrity. It also features command retry to minimize latency and maximizing throughput.
The 709269L9PF Memory is suited for many high-end applications including scientific computing, artificial intelligence, data processing, communications and networking, memory intensive embedded systems and automotive applications. It is also ideal for heavy duty workloads, memory intensive applications, and multitasking. It is a cost effective solution for application-specific needs.
The 709269L9PF Memory is designed to provide fast throughput, reliability, and low power consumption. Its multi-layer address bus, distributed error correction, and no wait-state architecture are optimized for maximum memory throughput and reliability. Additionally, its error correction capabilities, command retry, and hot spot avoidance strategies are designed to ensure data integrity. All these features make 709269L9PF Memory an ideal choice for ultra-high speed applications.
The specific data is subject to PDF, and the above content is for reference
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