Allicdata Part #: | 709269S9PF-ND |
Manufacturer Part#: |
709269S9PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Synchronous Memory IC 256Kb (16K... |
DataSheet: | 709269S9PF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 256Kb (16K x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 9ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT709269 |
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Memory is a key component of most electronic systems, used to store instructions and data. The 709269S9PF is a type of memory that is commonly used in applications such as embedded systems, digital signal processors, and microprocessors. In this article, we will discuss the application field and working principle of the 709269S9PF.
The 709269S9PF is an SRAM cell, which stands for Static RAM. SRAM is a type of memory that stores data in a non-volatile manner, meaning that the data will remain even after the power is removed. This makes it particularly well-suited for applications that require the data to be preserved over long periods of time, such as those whose operating environment is in the “field” or away from the main power source. SRAM is also faster and more reliable than DRAM, or Dynamic RAM, which requires that the data be constantly refreshed. This can be useful for applications such as control systems, where frequent accesses to the data need to be made quickly.
So what is the working principle of the 709269S9PF? In essence, SRAM is composed of a set of “cells”, each of which is capable of storing one bit of data. In the case of the 709269S9PF, each cell consists of two cross-coupled inverters, with two data lines connected to each inverter. When a voltage is applied to the DATA lines, the state of the cell can be determined by the voltage on the OUT lines. When the voltage on the DATA lines is low, the OUT lines will be high; when the voltage is high, the OUT lines will be low. This allows the circuit to store data in a non-volatile fashion.
In terms of applications, the 709269S9PF is often used for low-power, high-density memory solutions. It is particularly well-suited for embedded systems, as it requires minimal power consumption and offers greater reliability than DRAM. It is also suitable for a wide range of applications, such as digital signal processing, image processing, and microprocessor-based designs. Additionally, due to its simple structure and low power consumption, the 709269S9PF is often used in energy-sensitive applications, such as portable and mobile devices.
In all, the 709269S9PF is a type of SRAM cell that is used in a variety of applications due to its low power consumption and reliability. Its working principle is based on two cross-coupled inverters, with two data lines connected to each inverter. This allows the cell to store data in a non-volatile fashion, which makes it well-suited for applications where data needs to be preserved over long periods of time, such as in the field. It is also suitable for low-power, high-density memory solutions, and has been widely used in embedded systems, digital signal processors, and microprocessors.
The specific data is subject to PDF, and the above content is for reference
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