70V05S35PF8 Allicdata Electronics
Allicdata Part #:

70V05S35PF8-ND

Manufacturer Part#:

70V05S35PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ...
DataSheet: 70V05S35PF8 datasheet70V05S35PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)
Base Part Number: IDT70V05
Description

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Memory products can be found in almost any modern device, such as video game consoles, computers, and digital cameras. The 70V05S35PF8 is an innovative product in the latest generation of memory products created by NLP Technology. It has become a popular choice for many applications because of its huge memory capacity, high performance, and low power consumption.

The 70V05S35PF8 is a single-chip, dynamic random-access memory (DRAM) device. DRAM is a type of volatile memory, meaning that all stored information will be lost once the device is turned off. It takes advantage of a small capacitor in each memory cell to store data bits. The fact that the information is stored as an electric charge enables it to retain the data even when power is removed from the device.

In addition to being a dynamic memory, the 70V05S35PF8 also has a wide application field. Its large capacity makes it suitable for use in applications such as storage systems, laptops,and embedded systems. It can also be used inhardware acceleration and audio/video encoding. Besides, the 70V05S35PF8 can be employed in innovative applications, such as artificial intelligence, machine learning, and virtual reality.

Another benefit of the 70V05S35PF8 is its low power consumption. This helps to minimize system cost and reduce the heat generated in the device. The 70V05S35PF8 employs two major power conservation techniques: a power-down function and anauto-refresh function. With these features included, manufacturers can reduce the system power consumption significantly. As such, the 70V05S35PF8 is an excellent choice for applications that requirelong periods of continuous operation without sacrificing performance.

The 70V05S35PF8 also excels in terms of performance. It offersrandom-access times as low as 45ns and cycle time as low as 15ns. This makes it one of the fastest DRAM models on the market. Furthermore, the 70V05S35PF8 also features data transfer rates of up to 400 Mbps, which makes it suitable for high-speed applications.

The 70V05S35PF8 is an excellent choice for a variety of applications, thanks to its large capacity, high performance, low power consumption, and wide application field. It is the perfect solution for products that require large amounts of memory,while still being able to operate efficiently and effectively. The 70V05S35PF8 is an ideal choice for any application that requires a high degree of performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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