70V659S10BC8 Allicdata Electronics
Allicdata Part #:

70V659S10BC8-ND

Manufacturer Part#:

70V659S10BC8

Price: $ 70.47
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (12...
DataSheet: 70V659S10BC8 datasheet70V659S10BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 64.06780
Stock 1000Can Ship Immediately
$ 70.47
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70V659
Description

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Memory is an important part of any computer, and the 70V659S10BC8 is a memory device that offers users a wide range of features. The device is designed for use in embedded applications that require low power consumption, high speed memory retrieval, and an array of other functions. To understand how the device works, it is important to understand the benefits and features it offers, as well as its application field and working principle.

Benefits and Features of the 70V659S10BC8

The 70V659S10BC8 memory device is a highly reliable memory solution designed for use in embedded and hand-held applications. It offers a number of benefits and features that make it an ideal choice for many applications. These include:

  • Low power consumption – The device has a lower power consumption than other similar devices and can be operated with both 3V and 1.8V supplies. This gives it better efficiency and longevity, making it a cost-effective choice.
  • High speed – The device is able to provide an access time of 70 ns, making it suitable for fast and efficient applications that require high speed memory access.
  • Multiple parameters – The device is available with different parameters such as bus widths, address ports, etc., giving users the flexibility to customise the memory to suit their particular needs.
  • Reliable – The device is designed to be highly reliable and resilient to external shock, making it suitable for use in demanding environments.

Application Field

The 70V659S10BC8 memory device offers a broad range of applications, from consumer electronics and industrial equipment, to automotive systems and medical equipment. The device is suitable for use in any application that demands a reliable and efficient memory solution with low power consumption and high speed memory retrieval. This includes applications such as:

  • Consumer Electronics – The device can be used in a wide range of consumer electronics, such as digital cameras, digital camcorders, MP3 players, PDAs, and GPS devices.
  • Industrial Equipment – The device is suitable for use in industrial equipment such as factory automation systems, industrial control systems, and embedded telecommunications equipment.
  • Automotive Systems – The device is ideal for use in automotive systems such as engine control units, brake controllers, transmission control units, and navigation systems.
  • Medical Equipment – The device can be used in medical equipment such as blood pressure monitors, heart rate monitors, ECG monitors, and neuromonitors.

Working Principle

The 70V659S10BC8 is a synchronous dynamic random-access memory device (SDRAM). It uses a synchronous interface to transfer data between the memory device and the host system. The device is composed of an array of memory modules. Each memory module contains a set of memory cells that can be accessed in parallel by the host system. The device is controlled by a state machine that allows for commands to be sent to the memory device as well as for data to be transferred in and out of the memory device.

The device operates using a burst mode that allows for multiple sequential accesses to be made at once. In this mode, the memory device is precharged and then the first address is given to it. The device then transfers the requested data from the given address in a predetermined pattern. This pattern may be a linear gradient, a zigzag pattern, or another predetermined pattern. This burst mode allows for fast and efficient memory access, making the device suitable for applications that require fast memory retrieval.

Conclusion

The 70V659S10BC8 is a versatile memory device that is suitable for use in a wide range of embedded applications. It offers users a wide range of features and benefits, including low power consumption, high speed memory access, and an array of other features. Its application field includes consumer electronics, industrial equipment, automotive systems, and medical equipment, making it an ideal choice for a variety of applications. The device operates using a synchronous interface and operates in burst mode to provide fast and efficient memory access. All in all, the 70V659S10BC8 is a highly reliable and efficient memory solution.

The specific data is subject to PDF, and the above content is for reference

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