70V639S12BCI Allicdata Electronics
Allicdata Part #:

70V639S12BCI-ND

Manufacturer Part#:

70V639S12BCI

Price: $ 71.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 2.25M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 2.25Mb (1...
DataSheet: 70V639S12BCI datasheet70V639S12BCI Datasheet/PDF
Quantity: 1000
12 +: $ 65.13820
Stock 1000Can Ship Immediately
$ 71.65
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 2.25Mb (128K x 18)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70V639
Description

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V639S12BCI memory is a versatile, advanced High-Speed Memory (HSM) device. It is designed to provide both high-efficiency and performance for multiple applications. This device is an ideal choice for memory operations requiring high-capacity, high-speed, low-power and low-cost operations. It is capable of supporting a wide range of applications and operating environments.

V639S12BCI memory is based on the high-performance, high-density CMOS technology, which provides high-speed, high-capacity storage of digital information. It allows for simultaneous, multi-bit operations and several rewrites to increase overall system performance. The device features built-in arbitration, which provides each memory chip with an alternate route for performing data transactions. This process eliminates contention and enables a high-speed memory environment. Another feature of this memory device is its low-power consumption, which increases system efficiency and helps reduce operational costs.

V639S12BCI memory has many applications. It can be used in a number of memory requirements, such as in embedded systems, signal processing, data storage and management, as well as in industrial, medical, and communication systems. It is also suitable for various electronic designs, including server and computer systems, telecommunication via line-of-sight radio systems, controllers, and other automated equipment.The working principle of V639S12BCI memory is relatively simple. Essentially, it functions as a dynamic random-access memory (DRAM) device, where data is stored in an array of memory cells. When the memory device is accessed, a particular row and column in the array is specified. This row and column provide a specific address, which is used to locate and read the data. Once the data is located and read, it can be modified, if required.

V639S12BCI memory offers low-power operation and wide application support. Its high-speed, low-power design helps reduce operational costs and increases system efficiency. Furthermore, its high-density CMOS technology enables high-capacity storage of digital information and simultaneous, multi-bit operations. Overall, it offers a wide range of features and benefits that make it an ideal choice for many embedded and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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