Allicdata Part #: | 7130LA20TF8-ND |
Manufacturer Part#: |
7130LA20TF8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 8K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x... |
DataSheet: | 7130LA20TF8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 8Kb (1K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (10x10) |
Base Part Number: | IDT7130 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 7130LA20TF8 is an essential type of memory used in many different applications. Its primary purpose is to store data and applications to retain their integrity and performance when they are not actively in use, allowing them to be readily accessed when needed. It is used in applications such as industrial automation, medical and automotive electronics. The 7130LA20TF8 differs from other forms of memory in that it is non-volatile (remains in storage even when the power is off) and can store more data than traditional DRAM or SRAM chips.
The 7130LA20TF8 utilizes a unique architecture which is capable of offering an unprecedented data transfer rate. This type of memory is composed of several configuration/data buses, giving it the ability to transfer multiple pieces of data at any given time. It also operates with fewer errors than many other types of memory, making it suitable for applications where error reduction is important. The 7130LA20TF8 has a single-stream write/read technique that allows it to deliver high-speed data access and write performance.
The working principle of this type of memory is based on a series of electrical connections between the rewritable memory cells. This is accomplished through three basic steps. The first step involves creating a connection between the memory cells by routing the connections through an array of physical connections in the data bus. The second step is to apply the appropriate voltage to the connections to activate the memory cells. The third and final step is to write or read the data into the memory cells. This process is repeated in order to access the data. It is important to note that once the data is written, it remains in the memory cells until it is erased.
The 7130LA20TF8 has many advantages over other types of memory, such as its low energy consumption, its ability to store large amounts of data, its high speed data access and write performance, and its non-volatile nature. This makes it suitable for a wide range of applications, such as industrial automation, medical and automotive electronics. It is also popular in mobile devices such as smartphones, tablets and wearable devices that require high-speed data processing, storage and access. Due to its reliability and efficiency, the 7130LA20TF8 is an invaluable asset in the ever-growing memory market.
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