7130LA35C Allicdata Electronics
Allicdata Part #:

7130LA35C-ND

Manufacturer Part#:

7130LA35C

Price: $ 31.94
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL SB48
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130LA35C datasheet7130LA35C Datasheet/PDF
Quantity: 1000
40 +: $ 29.03960
Stock 1000Can Ship Immediately
$ 31.94
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED
Base Part Number: IDT7130
Description

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The 7130LA35C is a memory device designed using advanced dynamic random access memory (DRAM) technologies for stand-alone and embedded applications. It offers high density and performance capabilities combined with ease of use, versatility, and scalability. The device features an advanced architecture that supports a high density data storage capacity, low power consumption, and fast data access. This makes it ideal for the applications in which performance and density are essential.

The 7130LA35C is a DRAM device that uses a low voltage differential signaling (LVDS) interface, which allows for high speed data transfer with low power consumption. It is an asynchronous device that requires no external timing device, which greatly simplifies its design compared to synchronous memories. The device has a 16-bit data width and is available in 1Gbit and 2Gbit densities, with a clock speed up to 133 MHz.

The underlying technology of the 7130LA35C is the same used for the more volatile DRAM devices. It utilizes a matrix of cells, each of which is composed of a combination of capacitors and transistors. These cells are arranged in a precise pattern known as a “ array”, and each cell is connected to its individual bit line. The rows and columns of the array are connected to the input/output pins of the device, enabling data storage and manipulation.

The working principles of the 7130LA35C are quite simple. The cells are arranged in a matrix, and each cell is addressed via its two bit line connections. The bits stored in the cells can be changed by applying a voltage differential to the bit lines. This triggers the memory cell to change its stored charge, thereby changing the data stored in the cell.

The 7130LA35C is commonly used in a variety of applications including consumer electronics such as TVs, digital cameras, and gaming consoles; portable consumer electronics such as smartphones, tablets, and portable media players; and embedded applications such as medical imaging, automotive applications, and industrial automation.

The 7130LA35C is an excellent choice for applications requiring a high-density, high-performance memory device. Its advanced architecture and LVDS interface makes it ideal for applications that require high performance and low power consumption. It is also easy to use and provides scalability, making it an excellent choice for a variety of embedded and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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