7130LA35JI8 Allicdata Electronics
Allicdata Part #:

7130LA35JI8-ND

Manufacturer Part#:

7130LA35JI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130LA35JI8 datasheet7130LA35JI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Description

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The 7130LA35JI8 is a type of memory device which has a wide range of uses and applications in many different fields. In this article, we will discuss the application field and working principle of the 7130LA35JI8 memory device.

The 7130LA35JI8 is a non-volatile memory device, meaning that it does not require electrical power for its operation. This type of memory is often used in applications such as data storage devices, embedded systems, and computer and industrial automation applications. The 7130LA35JI8 also has the advantage of being able to store large amounts of data and is often used in large database and application storage systems.

The 7130LA35JI8 can be used for a variety of different types of memory applications. It is commonly used in consumer electronics for data storage in digital cameras, portable media players, and so on. It is also used in industrial applications for data storage in robotics systems and control systems. Additionally, it is often used in military and aerospace applications, such as missile guidance systems.

The 7130LA35JI8 memory device works by using an array of parallel circuits to read and write data. The device is comprised of boolean circuits, which are binary logic gates that are used to store and read data. The data is written and stored using a combination of address and data buses. Each of the address and data buses comprise several hundred individual wires, which can be programmed individually by the user.

The device is programmed to read and write data by connecting specific address and data nets. Once programmed, data can be written to the device by applying a voltage across the address and data nets. Data is read from the device by applying a voltage to the data nets and reading the voltages on the address nets.

The 7130LA35JI8 memory device offers a number of advantages over other types of memory devices. It has low power consumption, allows for high density storage, and has a fast write and read speed. Additionally, it can be easily programmed and reprogrammed by the user, making it an ideal memory device for use in practically any memory application.

In conclusion, we have discussed the application field and working principle of the 7130LA35JI8 memory device. This type of memory device is useful in many different applications, from consumer electronics to military and aerospace applications. It is also highly efficient, allowing for high density storage and fast read and write speeds. With its wide range of applications, the 7130LA35JI8 memory device is a great choice for any memory application.

The specific data is subject to PDF, and the above content is for reference

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