7130SA20PF8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	8Kb (1K x 8)
Write Cycle Time - Word, Page:	20ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LQFP
Supplier Device Package:	64-TQFP (14x14)
Base Part Number:	IDT7130

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7130SA20PF8 Memory: Application Field and Working Principle

Memory is one of the key components of any electronic device, including computers, laptops, smartphones, and tablets. The 7130SA20PF8 memory is a type of dynamic random access memory (DRAM) and provides high-speed, high-performance, reliable data storage for a wide range of applications. This article provides an overview of the application field and working principle of 7130SA20PF8 memory.

Application Field of 7130SA20PF8 Memory

The 7130SA20PF8 memory is widely used in consumer electronics such as personal computers, laptops, smartphones, and tablets. It is also used in industrial applications such as networking and in the telecommunication sector. The 7130SA20PF8 memory is used in servers, enterprise systems, and in embedded scenarios where low power consumption is critical. The memory is also used in embedded applications such as consumer electronics, appliances, security systems, and industrial robots.

Working Principle of 7130SA20PF8 Memory

The 7130SA20PF8 memory is a type of DRAM that utilizes a static random access memory (SRAM) cache and an internal register-like structure, referred to as a row-buffer. Data is transferred from the row-buffer, which stores up to 8 data words or 16 bytes, to the SRAM cache. The SRAM cache holds up to 32 data words or 64 bytes of data, which is then transferred to the memory’s memory core.The 7130SA20PF8 memory supports burst of up to 8 words or 16 bytes. During a burst, multiple accesses can be made to the memory core, allowing for high performance in applications that require multiple memory accesses. The memory also utilizes low-power features such as power-down modes and refresh cycles, to reduce power consumption.

Conclusion

The 7130SA20PF8 memory is a type of DRAM that provides high-speed, high-performance, reliable data storage for a wide range of applications, from consumer electronics to enterprise systems. It utilizes an SRAM cache, an internal row-buffer, and low-power features such as power-down modes and refresh cycles to reduce power consumption. The memory also supports burst of up to 8 words or 16 bytes, which makes it suitable for applications that require multiple memory accesses.

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