7130SA100CB Allicdata Electronics
Allicdata Part #:

7130SA100CB-ND

Manufacturer Part#:

7130SA100CB

Price: $ 51.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL SB48
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130SA100CB datasheet7130SA100CB Datasheet/PDF
Quantity: 1000
40 +: $ 46.57400
Stock 1000Can Ship Immediately
$ 51.23
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED
Description

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The 7130SA100CB is a type of semiconductor memory device. This device is specially designed to be used in a wide variety of applications, and is known for its high performance and usability. The device is a SRAM (Static Random Access Memory) device, which offers fast write and read times, and low power consumption. It offers a wide range of features such as first-in-first-out (FIFO) storage and error checking and correction. It also has an integrated address register, making it a very efficient memory device.

The 7130SA100CB contains two basic components: a SRAM array and a FIFO buffer. The SRAM array is where data is stored and accessed, while the FIFO buffer is used to store information in a serial manner. In addition, the device contains its own address register, which allows it to quickly access data without having to first fetch the entire SRAM array. This makes it a very efficient device.

The 7130SA100CB is commonly used in a number of applications, ranging from aerospace to industrial electronics and instrumentation. It is also quite useful in data processing, communications and automation applications. Its ability to store large amounts of data and access them quickly makes it a very useful tool in many applications.

The 7130SA100CB offers a number of advantages over other types of memory devices, including its ability to store large amounts of data. It also provides a low power draw, which makes it a very efficient device. Furthermore, its FIFO buffer makes it easy to store and access data quickly, allowing for fast data write and read times. Finally, its integrated address register makes it very efficient in addressing data.

The 7130SA100CB utilizes a basic working principle of reading and writing data. When data is read from the SRAM array, it is stored in the integrated address register, which allows the device to access the data quickly. When data is written to the device, it is stored in the FIFO buffer, where it is then sent to the SRAM array in a serial manner. The device then reads the data from the SRAM array and stores it in the address register, allowing it to be quickly accessed. This makes the 7130SA100CB a very efficient device.

The 7130SA100CB is an ideal choice for many different applications, from aerospace to industrial electronics and instrumentation. Its fast write and read times, low power draw, and integrated address register make it a very efficient and useful tool for many tasks. Furthermore, its ability to store large amounts of data makes it a very useful and versatile memory device.

The specific data is subject to PDF, and the above content is for reference

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