7130SA100P Allicdata Electronics
Allicdata Part #:

800-2124-ND

Manufacturer Part#:

7130SA100P

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL 48DIP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7130SA100P datasheet7130SA100P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP
Base Part Number: IDT7130
Description

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The 7130SA100P is a non-volatile, quad-channel, single-ended, low-current, electrostatic discharge-protected EEPROM memory device. It was originally developed by Cypress Semiconductor, and features an enhanced internal architecture, faster write speeds and improved data retention.

The 7130SA100P device has a static random access memory (SRAM) core architecture. It can support up to 128-bits of data in a single memory cell, which is 8-bits wide. The device also has a random access memory controller, which can manage the reading and writing operations.

The 7130SA100P is typically used in applications like Control Area Networks (CAN) and local area network (LAN) control, cross-point switching, image processing, smart cards, and medical applications.

At its core, the 7130SA100P device works on the principle of static random access memory (SRAM). This type of memory utilizes a volatile, high-speed memory cell structure whereby data is stored in rows and columns of cells, which can be accessed directly by the user. The data can be both quickly read from and written to these memory cells by the user.

The 7130SA100P utilizes a number of protective features and methods to ensure data is not lost in the event of an electrical event, such as a power failure. These include a built-in software controlled power-on reset, write protection circuitry, and the use of ESD protection devices. Additionally, the device incorporates an embedded error correction code (ECC) to improve the accuracy and reliability of the stored data.

In summary, the 7130SA100P is a non-volatile, quad-channel, single-ended, low-current, electrostatic discharge-protected EEPROM memory device. This device uses static random access memory (SRAM) technology to store data, and features a number of protective features and methods to ensure data is not lost due to events such as power failures. The 7130SA100P has a wide range of applications, such as Control Area Networks (CAN) and local area network (LAN) control, cross-point switching, image processing, smart cards, and medical applications.

The specific data is subject to PDF, and the above content is for reference

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