7143SA25J Allicdata Electronics
Allicdata Part #:

7143SA25J-ND

Manufacturer Part#:

7143SA25J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ...
DataSheet: 7143SA25J datasheet7143SA25J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Base Part Number: IDT7143
Description

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Memory

7143SA25J is a dynamic random access memory (DRAM) chip for medium-high speed applications. This memory is available in two different densities, 4 Megs and 8 Megs. It is also available in two different package sizes, 12X12 and 16X16. The chip is based on a 6T (transistor) cell and uses an on-chip clock generator.

Application Field

7143SA25J is commonly used in various industries, including automotive, industrial, and medical. It is great for applications that require fast data retrieval and switching, like motion control, car navigation, and secure processing. It is also used in digital video processing and image processing.

7143SA25J is suitable for various devices and systems, including radar, sonar, radio communications, 3G/4G cellular phones, robotics, and set-top boxes. It can also be used in networking components, communications equipment, and medical imaging systems.

Working Principle

7143SA25J utilizes an asynchronous interface, meaning that the memory is clocked by an external clock, rather than from an on-chip clock generator. This chip implements a fully self-refreshing architecture, meaning that it can autonomously refresh its memory cells, without needing to be clocked externally for refreshing.

The chip utilizes a sealed trench capacitor technology. This technology uses a wafer-level deposition process to form the capacitors in a hermetically sealed memory cell. This enables the chip to have very high density and low power operation. This makes the chip suitable for applications that require low-power and high-density memory.

The chip is also designed with built-in intelligence. It incorporates on-chip error correction and detection circuitry. This makes the chip very reliable in data storage applications. The technology also allows the chip to have enhanced electrical properties, such as faster data access and higher data integrity.

7143SA25J is also designed with built-in NOR-mode protection. This protection prevents the chip from entering a false state when its memory is not accessed for extended periods of time. This ensures that the memory can be restored to its original state after a power outage.

7143SA25J is a reliable and versatile memory chip for a range of applications. Utilizing on-chip clock generation, sealed trench capacitors, built-in error correction and detection, and NOR-mode protection, this chip is suitable for many medium-high speed applications.

The specific data is subject to PDF, and the above content is for reference

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