71V30S55TFG Allicdata Electronics
Allicdata Part #:

800-3622-ND

Manufacturer Part#:

71V30S55TFG

Price: $ 6.57
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 71V30S55TFG datasheet71V30S55TFG Datasheet/PDF
Quantity: 44
1 +: $ 5.96610
10 +: $ 5.49108
25 +: $ 5.37718
50 +: $ 5.35802
100 +: $ 4.80677
250 +: $ 4.66099
500 +: $ 4.43286
1000 +: $ 4.27760
Stock 44Can Ship Immediately
$ 6.57
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)
Base Part Number: IDT71V30
Description

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Memory: 71V30S55TFG Application Field and Working Principle

71V30S55TFG is a type of memory that is primarily used in embedded systems, such as those found in aerospace, industrial, and medical automation. It is a form of nonvolatile random-access memory (NVRAM) that is used for storing data when the circuit board is powered down or reset. As a result, it is ideal for applications requiring data to be stored between power cycles or resets.

Overview of 71V30S55TFG Memory

71V30S55TFG memory is based on NVRAM technology that uses cells that store electrical charges, which allows the data to be saved even when the power is switched off. The memory is composed of two N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) cells connected in series per bit. The charge is maintained in each cell by its own voltage, increasing the retention time and overall system reliability.

What Makes 71V30S55TFG Memory Ideal for Use in Embedded Systems?

71V30S55TFG memory is an ideal choice for embedded systems because of its many advantages. First and foremost, it is nonvolatile, meaning that it does not require power to maintain the data stored in it. This reduces the power consumption of embedded systems, which helps increase battery life. Additionally, the memory has a relatively simplified architecture that makes it easier to design and implement into embedded systems. It also has a fast access time, meaning that the system can retrieve data quickly and efficiently.

Applications of 71V30S55TFG Memory

71V30S55TFG memory is primarily used in embedded systems, particularly those found in aerospace and industrial automation. It is also used in medical equipment and in some telecommunication systems. Additionally, this memory is used in automotive and avionics applications.

Working Principle of 71V30S55TFG Memory

71V30S55TFG memory works on the principle of NVRAM cells that store electrical charges. The memory is composed of two N-channel MOSFET transistor cells that are connected in series per bit. These cells store the charge when the power is switched off, allowing the data to be maintained.When the system needs to access the data, the voltage is applied and the cells are activated. This causes the cells to react and the data is then read from them. However, when the power is switched off, the charge in these cells maintains the data, allowing it to be accessed on the next power cycle.

Conclusion

71V30S55TFG memory is a form of nonvolatile random-access memory that is ideal for use in embedded systems where data must be stored between power cycles or resets. It is composed of two N-channel MOSFET transistor cells that store electrical charges, allowing the data to be retained even when the power is switched off. This memory is used in embedded systems, medical equipment, telecommunication systems, automotive applications, and avionics applications.

The specific data is subject to PDF, and the above content is for reference

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