71V321L25TFI Allicdata Electronics
Allicdata Part #:

71V321L25TFI-ND

Manufacturer Part#:

71V321L25TFI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71V321L25TFI datasheet71V321L25TFI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)
Base Part Number: IDT71V321
Description

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Introduction to 71V321L25TFI Memory

The 71V321L25TFI memory is a type of low-power, non-volatile, static random-access memory (SRAM). The technology is designed to reduce power consumption by using less power to operate and providing excellent retention performance over a long period of time. It offers a wide range of features and benefits, including support for low-level programming, high-temperature operation, very low pin count, and die-level flexibility. It is a very versatile technology that can be used in a wide range of applications, such as Internet of Things (IoT) devices, automotive systems, and medical devices.

71V321L25TFI Application Field

The 71V321L25TFI memory can be used in a variety of applications. Its low-power characteristics make it an excellent choice for IoT applications, as it can help extend battery life. It is also an ideal choice for medical devices, as it offers excellent durability and long-term retention characteristics. It can be used in automotive systems for data storage and as a configuration memory for sensors and controllers. Furthermore, it is a flexible solution for embedded systems and embedded software applications, as it offers low pin count and low operating power.

71V321L25TFI Working Principle

The 71V321L25TFI memory is a static memory, meaning that it does not require any refresh or refresh signal. It is a one-time programmable technology, which means that the data can only be written to the chip once. The data are held in the memory by a charge stored in capacitors. This technology provides excellent retention performance, allowing data to be stored in the memory for years. The memory also has low operating voltage, which helps reduce power consumption.

The 71V321L25TFI memory is based on the One Cell Layout architecture, a die-level architecture that provides excellent flexibility. This architecture enables the memory module to consist of multiple memory cells that can be accessed separately and in any order. This allows the memory module to be divided into multiple areas, allowing each area to be used for different applications. Additionally, the architecture allows for low-level programming, which enables the memory to be easily customized for different applications.

The 71V321L25TFI memory also offers high-temperature operation. This technology is designed to withstand extreme temperature ranges, ensuring that data will remain intact even in harsh environments. Additionally, it offers multiple modes of operation for different applications, such as read and write functions, burst mode operation, and multiple write cycles per cycle.

Conclusion

The 71V321L25TFI memory is a versatile and low-power memory solution that is ideal for IoT applications, automotive systems, medical devices, and embedded systems. This technology offers a wide range of features, including low-level programming, high-temperature operation, low pin count, multiple modes of operation, and die-level flexibility. It is a one-time programmable memory that provides excellent retention performance over a long period of time.

The specific data is subject to PDF, and the above content is for reference

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