71V3577S80BGI8 Allicdata Electronics
Allicdata Part #:

71V3577S80BGI8-ND

Manufacturer Part#:

71V3577S80BGI8

Price: $ 4.28
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: 71V3577S80BGI8 datasheet71V3577S80BGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 3.88466
Stock 1000Can Ship Immediately
$ 4.28
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3577
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 8ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 71V3577S80BGI8 is a type of memory device. This memory device is often used in a variety of applications, from consumer electronics to automotive and industrial applications. It is known for its high speed and low power operation. As such, it is a popular choice for many modern applications.

The71V3577S80BGI8 is a DRAM module that is designed to provide a large storage capacity, with a maximum capacity of 256MB. This allows it to be used in a wide range of applications, from media players and gaming consoles to industrial controllers and embedded systems. It is also often used in high-performance server and embedded applications.

The 71V3577S80BGI8 uses a dual-bank configuration, with two banks of memory. This allows for a high level of flexibility when configuring the memory system, as well as the ability to store more data in less space. The device also offers an extended row address range, allowing for large amounts of data to be stored in each bank.

The 71V3577S80BGI8 memory device uses a synchronous burst-write interface. This is a high-speed data transfer protocol that provides a high data rate and reliable performance. It uses a serial interface, allowing for faster transfers than a parallel interface. In addition, the device supports up to two concurrent write or read operations, allowing for greater throughput.

The 71V3577S80BGI8 memory device is designed to offer robust reliability and performance. It is designed with an internal error correction code to prevent data corruption. It also features a built-in power management system, allowing it to conserve power when not in use. The device also offers a number of advanced capabilities, such as data-scrubbing and self-refresh.

The 71V3577S80BGI8 memory device is well-suited for a wide range of applications. It can be used in consumer electronics, embedded systems, gaming consoles, and more. It offers a high data rate, reliable performance, and advanced power management capabilities. For these reasons, the 71V3577S80BGI8 is a popular choice for many modern applications.

The specific data is subject to PDF, and the above content is for reference

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