71V3577S80BQ Allicdata Electronics
Allicdata Part #:

71V3577S80BQ-ND

Manufacturer Part#:

71V3577S80BQ

Price: $ 3.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 165CABGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: 71V3577S80BQ datasheet71V3577S80BQ Datasheet/PDF
Quantity: 1000
136 +: $ 3.51225
Stock 1000Can Ship Immediately
$ 3.87
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3577
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 8ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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The 71V3577S80BQ memory is a semiconductor memory device that is used for short-term storage of data and instructions. The device is typically used in applications such as a personal computer\'s Random Access Memory (RAM) and cache, a digital set-top box, or any other device that requires data storage with quick access and retrieval times. The 71V3577S80BQ memory offers fast access times and low power consumption, which makes it an ideal choice for mobile and embedded applications.

The 71V3577S80BQ memory consists of 4M bits (512K words) of RAM divided into two 256K word banks. Each bank has a separate address and control ports. The memory is configured with a 16-bit data bus and addresses. The 71V3577S80BQ memory is available in both NMOS and CMOS technology, which can be configured to meet the speed, power consumption, and reliability requirements of the device.

The 71V3577S80BQ memory can be used for a variety of applications, such as a high-speed data cache for server applications, a low-power memory for embedded applications, and a fast access memory for high-performance computing. It can also be used as a ROM for microcontroller applications. The device has an access time of 120ns and is available in both 5V and 3.3V versions.

In terms of working principle, the 71V3577S80BQ memory uses a static random access memory (SRAM) architecture. SRAM is a type of computer memory that stores data until it is powered down. It is similar to dynamic random access memory (DRAM) but has faster access times and improved reliability due to its static nature. It utilizes four transistors to store one bit of data and does not require refreshing, which allows for low power consumption.

The 71V3577S80BQ memory also features a power-down mode that allows for low power consumption. In this mode, the memory banks are turned off and all data is retained in the device. This power-saving mode prevents data loss in the event of a power outage. As a result, this device is well suited for mission critical applications where data retention is essential.

The 71V3577S80BQ memory is also available in programmable versions, allowing users to configure the device for specific applications. For instance, the memory can be programmed to allow only certain addresses to be accessed, providing extra security for sensitive data. It also has six programmable bits, allowing users to tailor the device to their specific needs. This is especially useful for embedded applications where flexibility and customizability is essential.

The 71V3577S80BQ memory device offers an ideal solution for applications that require fast access times, low power consumption, and high reliability. With its multiple configurations, programmable features, and power-saving modes, this device is suitable for a variety of applications. With its fast access times, low power consumption, and reliability, the 71V3577S80BQ memory is an excellent choice for mobile and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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