71V3556SA166BGGI

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71V3556SA166BGGI is a type of memory integrated circuit developed by IDT. It is a high-speed, low-power, double-data rate (DDR) static random access memory (SRAM). It is designed to provide high-performance, low-cost memory solutions for various applications.

The 71V3556SA166BGGI memory includes 16M Words of 8-bit x 8 bit configurations and has a power consumption rating of 1.4V/4.4V. It has an access time of 7ns and supports data rates up to 400MHz (800MT/s). The device is packaged in an 81-ball FBGA and is available in two speed grades, the fastest of which is rated at 400MHz (800MT/s).

The 71V3556SA166BGGI memory is commonly used in applications such as automotive infotainment, advanced driver assistance systems (ADAS), datacenters, and 5G networking. In automotive applications, it is used to store data related to entertainment systems, navigation maps, and other car functions. In ADAS applications, the device is used to store data related to the safety of the vehicle, such as distance and direction tracking. Additionally, 71V3556SA166BGGI memory is commonly used in servers and switches in datacenters, as well as in 5G network base stations.

The working principle of the 71V3556SA166BGGI memory is to store data in a series of capacitors, each of which can hold a charge representing a single bit of information. The device is composed of two parts: the memory array and the control circuitry. The memory array is composed of an array of memory cells, each of which can store a single bit of information. The control circuitry is responsible for controlling the operations of the memory array, such as reading and writing data. When a user wants to access data, the control circuitry will read the data from the corresponding memory cell.

In summary, the 71V3556SA166BGGI memory is a high-performance, low-power DDR SRAM memory integrated circuit. It is commonly used in automotive, ADAS, datacenter, and 5G networking applications. The device is composed of two parts, the memory array and the control circuitry, and works by using an array of capacitors to store data in memory cells.

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