71V35761S166BGG

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71V35761
Supplier Device Package:	119-PBGA (14x22)
Package / Case:	119-BGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	3.135 V ~ 3.465 V
Memory Interface:	Parallel
Access Time:	3.5ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	4.5Mb (128K x 36)
Technology:	SRAM - Synchronous
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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IntroductionThe 71V35761S166BGG is a type of memory that is used in a wide range of applications. It is a high-density memory device that provides a high speed and efficient storage capacity for applications. This article will discuss the application fields of the 71V35761S166BGG and its working principle.Application FieldsThe 71V35761S166BGG is widely used in various applications. It is mainly used in high-speed data processing, digital communication systems, automotive applications, and medical devices. In high-speed data processing, it can be used to store data at a high speed and also provide reliable access to the stored data. In digital communication systems, it can be used to store and transfer digital signals. In automotive applications, it can be used to store engine control parameters, store data for navigation systems, store data for autonomous driving functions, and store data for infotainment systems. In medical devices, it can be used for storing medical imaging data, for monitoring vital signs, and for storing patient data.Working PrincipleThe 71V35761S166BGG memory device works on a static random access memory (SRAM) architecture. It uses a CMOS process technology, which provides access times as low as 10 nanoseconds. The device is organized into two banks, each of which consists of 16K X 16 bits of memory. The data is organized into 32-bit words, which are accessed in two 16-bit word groups. The memory device is designed to provide high speed, low-power performance in applications, and features automatic data-flow control, burst mode, single-cycle read and write operation, multiple cycle operation and pipeline operation, and simple memory control protocol. The device can be configured with three distinct power modes: active power-down, deep power-down and standby mode. In active power-down mode, the device is in the lowest possible operating power mode while maintaining access to the memory. In deep power-down mode, the device is in a low power state and is not accessible. In standby mode, the device is always in a fully-operational state, but can be quickly switched to an active state when needed.ConclusionThe 71V35761S166BGG is a type of memory that is used for a wide range of applications. It is mainly used in high-speed data processing, digital communication systems, automotive applications, and medical devices. It has a very fast access time and is organized into two banks with each bank consisting of 16K X 16 bits of memory. The device works on a static random access memory (SRAM) architecture and has a CMOS process technology. It also features three power modes: active power-down, deep power-down and standby mode.

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