80EPF06 Allicdata Electronics
Allicdata Part #:

80EPF06-ND

Manufacturer Part#:

80EPF06

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 80A TO247AC
More Detail: Diode Standard 600V 80A Through Hole TO-247AC
DataSheet: 80EPF06 datasheet80EPF06 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 190ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Description

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The 80EPF06 MOSFET is part of a rectifier single diodes variety from ON Semiconductor. This type of single diode can typically be used as a fast recovery, rectifying or avalanche diode, depending on the application. It leverages the latest technology in high-speed switching and can work with a broad range of voltage ratings.

The 80EPF06 MOSFET is comprised of a single diode connected to MOSFET technology. The MOSFET is responsible for providing the electrical conduction between the source and the drain. It is constructed on the same die as the single diode and serves to increase the speed of the conduction process. The combination of the two technologies ensures an extremely efficient, low operating temperature switching performance.

The 80EPF06 MOSFET uses a vertical field-effect transistor (VFET) in the construction of the diode. This type of transistor allows for a very low on-resistance and a high frequency. The VFET also minimizes the drain-source capacitance and reduces losses in the conductive path.

The 80EPF06 MOSFET is capable of providing a large voltage range and is suitable for a variety of applications. It is suitable for use in portable electronic devices, LED lighting, home and commercial appliances and telecommunications. Additionally, it is a great choice for automotive and industrial applications.

The operating principle of the 80EPF06 MOSFET is based on the source-drain current reduction caused by the application of a gate current. When a positive gate current is applied, electrons and holes are injected through the gate channel. This causes a negative drain current, reducing the drain-source current. This creates a voltage drop across the drain-source, which is known as the \'on-resistance\' of the MOSFET.

Once the gate current is removed, the drain-source current turns back on. The excess electrons and holes cause a negative drain current, so the transistor acts as a diode, allowing the drain current to flow through it and resume the control of the drain-source voltage. This is known as the \'cut-off voltage\'.

The 80EPF06 MOSFET is designed to perform at high speed and is capable of providing a high frequency, low power dissipation and low on-resistance. It is suitable for a variety of applications, such as switching and rectification in portable electronic devices. Additionally, it can be used to control high voltage, high current and energy conversion in automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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