Allicdata Part #: | 8EWF02STR-ND |
Manufacturer Part#: |
8EWF02STR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A DPAK |
More Detail: | Diode Standard 200V 8A Surface Mount D-PAK (TO-252... |
DataSheet: | 8EWF02STR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 140ns |
Current - Reverse Leakage @ Vr: | 100µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | 8EWF02 |
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8EWF02STR Application Field and Working Principle
The 8EWF02STR is a rectifier diode, meaning it is a two-terminal, semiconductor device that is designed for use as a fast-switching device for various types of circuits. It is packaged in a SOT-223 package, and is designed for fast switching applications such as switching power supplies, and for detecting impulse-sensitive devices such as solenoids.
Applications
The 8EWF02STR has a number of applications. It can be used in switching power supplies, protectors, and solenoid drivers. It is also used in high-frequency gate driver circuits and in DC-DC converters. It can also be used in surge protection circuits, and in laser diode drivers.
Working Principle
The 8EWF02STR is a rectifier diode with a maximum forward voltage of 2.2 V and a maximum reverse voltage of 12 V. The device consists of two p-n junctions connected in series. When a positive voltage is applied to the anode, the diode conducts current, and when a negative voltage is applied to the cathode, the diode does not conduct current. The forward current carrying capacity of the 8EWF02STR is 800 mA, and the peak forward surge current is 2.5 A.
The 8EWF02STR has an internal structure that is similar to other rectifier diodes. It consists of a single, thin piece of semiconductor material, usually silicon, that is connected between two electrically conducting electrodes. The n-type material, also known as an anode, connects to the positive terminal, while the p-type material, also known as a cathode, connects to the negative terminal. In forward bias, electrons flow from the n-type material to the p-type material and the diode allows current to flow, while in reverse bias, the current is blocked.
When using the 8EWF02STR, it is important to note that it is capable of switching at frequencies up to 5 MHz, making it suitable for high-speed applications. It has a junction capacitance of 7 pF that allows for fast switching operations. Additionally, it is an efficient switch, having a low voltage drop of 0.7 V at a forward current of 400 mA. This makes it ideal for applications with low power consumption requirements.
Conclusion
The 8EWF02STR is a rectifier diode that is used in a variety of applications. It is capable of conducting high-frequency switching operations and has a low forward voltage drop. It is packaged in a SOT-223 package that is suitable for use in high-speed switching and impulse-sensitive devices. It is an efficient diode that is suitable for applications where low power consumption is critical.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-8EWF06S-M3 | Vishay Semic... | 2.36 $ | 1204 | DIODE GEN PURP 600V 8A TO... |
VS-8EWF04S-M3 | Vishay Semic... | 2.36 $ | 942 | DIODE GEN PURP 400V 8A TO... |
VS-8EWF02S-M3 | Vishay Semic... | 2.36 $ | 690 | DIODE GEN PURP 200V 8A TO... |
VS-8EWF10S-M3 | Vishay Semic... | 2.36 $ | 756 | DIODE GEN PURP 1KV 8A TO2... |
VS-8EWF12S-M3 | Vishay Semic... | 2.36 $ | 2165 | DIODE GEN PURP 1.2KV 8A T... |
VS-8EWF06SLHM3 | Vishay Semic... | 0.55 $ | 1000 | DIODES - D-PAK-E3Diode St... |
VS-8EWF12SLHM3 | Vishay Semic... | 0.55 $ | 1000 | DIODES - D-PAK-E3Diode St... |
VS-8EWF12STR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF02STRL-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 8A D-... |
VS-8EWF02STR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 8A D-... |
VS-8EWF02STRR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 8A D-... |
VS-8EWF04STRL-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 400V 8A D-... |
VS-8EWF04STR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 400V 8A D-... |
VS-8EWF04STRR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 400V 8A D-... |
VS-8EWF06STRL-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF06STR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF06STRR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF10STRL-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1KV 8A D-P... |
VS-8EWF10STR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1KV 8A D-P... |
VS-8EWF10STRR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1KV 8A D-P... |
VS-8EWF12STRL-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF12STRR-M3 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF02STRLPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 8A DPAKDio... |
VS-8EWF02STRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 8A DPAKDio... |
VS-8EWF04STRLPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 8A DPAKDio... |
VS-8EWF04STRRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 8A DPAKDio... |
VS-8EWF10STRLPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A DPA... |
VS-8EWF02STRRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A D-... |
VS-8EWF06STRLPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF06STRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF06STRRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D-... |
VS-8EWF12STRLPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF12STRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF12STRRPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 8A D... |
VS-8EWF02SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-8EWF04SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
VS-8EWF06SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8EWF10SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
VS-8EWF12SPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 8A T... |
8EWF02S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A DP... |
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